Performance of electronic devices submitted to X-rays and high energy proton beams

Silveira, M. A. G.; Cirne, K. H.; Santos, R.B.B.; Gimenez, Salvador Pinillos; Medina, N. H.; Added, N.; Tabacniks, M.H.; Barbosa, M. D. L.; Seixas, L. E.; Melo, W.; Lima, J.A. De

doi:10.1016/j.nimb.2011.07.058

Cited by 14 publications

(5 citation statements)

References 7 publications

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“…With the collected data, it is possible to study the deviations caused by accumulation of electron-hole pairs, generated in the structure of the MOSFET, due to Total Ionizing Dose provoked by the Xray radiation process [9].…”

Section: Methodsmentioning

confidence: 99%

Electronic system for data acquisition to study radiation effects on operating MOSFET transistors

Oliveira¹,

Melo²,

Guazzelli³

et al. 2014

AIP Conference Proceedings

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Abstract. In this work we present the development of an acquisition system for characterizing transistors under X-ray radiation. The system is able to carry out the acquisition and to storage characteristic transistor curves. To test the acquisition system we have submitted polarized P channel MOS transistors under continuous 10-keV X-ray doses up to 1500 krad. The characterization system can operate in the saturation region or in the linear region in order to observe the behavior of the currents or voltages involved during the irradiation process. Initial tests consisted of placing the device under test (DUT) in front of the X-ray beam direction, while its drain current was constantly monitored through the prototype generated in this work, the data are stored continuously and system behavior was monitored during the test. In order to observe the behavior of the DUT during the radiation tests, we used an acquisition system that consists of an ultra-low consumption16-bit Texas Instruments MSP430 microprocessor. Preliminary results indicate linear behavior of the voltage as a function of the exposure time and fast recovery. These features may be favorable to use this device as a radiation dosimeter to monitor low rate X-ray.

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Section: Methodsmentioning

confidence: 99%

Electronic system for data acquisition to study radiation effects on operating MOSFET transistors

Oliveira¹,

Melo²,

Guazzelli³

et al. 2014

AIP Conference Proceedings

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“…The results obtained from the fault injection campaigns will be useful in both, the validation of non-intrusive fault tolerant techniques applied to the aBC, and also in the emulation-based technique. The expected results to be obtained using FEIIUSP facilities [21][22][23] could be useful in order to show that the proposed aBC architecture is eligible as a fault tolerant device.…”

Section: Validation Via Fault Injectionmentioning

confidence: 97%

“…Features present in FPGAs like reconfiguration and readback capabilities are used to increase the observability and controllability of a circuit under test (CUT), making FPGAs important tools for fault injection emulation. There are several other techniques and optimizations for fault emulation [21], and some of them would be considered for adoption in a future work.…”

Section: Validation Via Fault Injectionmentioning

confidence: 99%

Non-intrusive fault tolerance in soft processors through circuit duplication

Ferlini

Silva

Bezerra

et al. 2012

2012 13th Latin American Test Workshop (LATW)

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The flexibility introduced by Conunercial-Off-The Shelf (COTS) SRAM based FPGAs in on-board system designs make them an attractive option for military and aerospace applications. However, the advances towards the nanometer technology come together with a higher vulnerability of integrated circuits to radiation perturbations. In mission critical applications it is important to improve the reliability of applications by using fault-tolerance techniques. In this work, a non-intrusive fault tolerance technique has been developed. The proposed technique targets soft processors (e.g. LEON3), and its detection mechanism uses a Bus Monitor to compare output data of a main soft-processor with its redundant module. In case of a mismatch, an error signal is activated, triggering the proposed fault tolerance strategy. This approach shows to be more efficient than the state-of-the-art Triple Modular Redundancy (TMR) and Software Implemented Hardware Fault Tolerance (SIHFT) approaches in order to detect and to correct faults on the fly with low area overhead and with no major performance penalties. The chosen case study is an under development On Board Computer (OBC) system, conceived to be employed in future missions of the Brazilian Institute of Space Research (INPE).

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“…With this energy, the range of the chlorine ions on Si is 15 m. The chlorine ions were accelerated in a 8 MV Pelletron Accelerator of the São Paulo University, Brazil [7,8]. To ensure that the observations would be comparables with those performed with X-ray irradiation, electrical characterization was also performed only after the devices have reached a steady state of radiation induced damage.…”

mentioning

confidence: 99%

Radiation Effect Mechanisms in Electronic Devices

Silveira¹

2014

Proceedings of 10th Latin American Symposium on Nuclear Physics and Applications — PoS(X LASNPA)

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In this work, P-and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35 Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate V th depends on the absorbed dose and dose rate. The deviation of V th is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.

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Performance of electronic devices submitted to X-rays and high energy proton beams

Cited by 14 publications

References 7 publications

Electronic system for data acquisition to study radiation effects on operating MOSFET transistors

Electronic system for data acquisition to study radiation effects on operating MOSFET transistors

Non-intrusive fault tolerance in soft processors through circuit duplication

Radiation Effect Mechanisms in Electronic Devices

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