“…Zinc oxide is a stable wide band gap semiconductor of low toxicity and cost, with many attractive physical properties and providing great possibilities to achieve novel or enhanced properties through doping. − It is studied for a wide range of applications including piezo-actuators, nanolasers, optoelectronics, − solar cells, − photoassisted cleaning of water and gases, water splitting for solar fuels, − catalysis for fuel synthesis, − batteries, ,− and sensors. ,,− Doping with d- and f-element ions is investigated with the aim to introduce new band gap states, changed electronic structure, and magnetic and catalytic centers to achieve energy up- and downconversion in solar cells, optoelectronics, sensors, piezo-optics and bioprobes, magnetic semiconductors, and redox-based catalysis. ,− Many of these applications may take advantage of the special properties of the 4f lanthanide (Ln) series ions, including narrow absorption and emission bands, due to the largely shielded and thereby, from ligand field symmetry fairly unaffected 4f electrons. When considering Ln doping, it is seen that the Ln 3+ ions are alio-valent and large, compared to the Zn 2+ ions present in the hexagonal ZnO .…”