2020
DOI: 10.1016/j.nima.2019.162486
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Performance of four CVD diamond radiation sensors at high temperature

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Cited by 10 publications
(3 citation statements)
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“…Especially, the MPCVD growth technique has been widely used nowadays for the growth of large-size SCD [12,13] and led to numerous applications of diamond as a semiconductor material. These applications include field-effect transistors and diodes for power electronics [14][15][16][17][18][19][20], microwave devices [21][22][23][24][25], deep-ultraviolet (DUV) light emitting diodes (LED) [26][27][28], DUV photodetectors [29,30], radiation detectors [31][32][33][34][35], microelectromechanical systems (MEMS) [36][37][38][39], and quantum sensors [40][41][42]. The utilization of diamond as a heat sink has also been attracting growing interesting in the application of high-power high-frequency communication, electrical power switch and others, in which the thermal dissipation is a problem [43][44][45][46][47].…”
Section: Introductionmentioning
confidence: 99%
“…Especially, the MPCVD growth technique has been widely used nowadays for the growth of large-size SCD [12,13] and led to numerous applications of diamond as a semiconductor material. These applications include field-effect transistors and diodes for power electronics [14][15][16][17][18][19][20], microwave devices [21][22][23][24][25], deep-ultraviolet (DUV) light emitting diodes (LED) [26][27][28], DUV photodetectors [29,30], radiation detectors [31][32][33][34][35], microelectromechanical systems (MEMS) [36][37][38][39], and quantum sensors [40][41][42]. The utilization of diamond as a heat sink has also been attracting growing interesting in the application of high-power high-frequency communication, electrical power switch and others, in which the thermal dissipation is a problem [43][44][45][46][47].…”
Section: Introductionmentioning
confidence: 99%
“…The available results indicate an upper operational limit of T < 240 • [126,128,[195][196][197][198][199][200][201][202], while a limit of about 300 • C for a 400 µm thick detector operated in pulse mode was reported in [199], and a claim of stable operation up to ~330 • C was reported in [126] for a diamond detector 100 µm thick. A recent paper [202] claims, for a detector 65 µm thick realized with tungstene metal contacts and irradiated by protons, a stable operation up to about 425 • C, the highest temperature reported so far for a diamond detector.…”
Section: Operation Of Diamond Detectors At High Temperaturementioning
confidence: 99%
“…Studies of diamond detectors operating at HT date back to the beginning of the 2000s when the first artificial SCD films become available and are still ongoing [128,153,154,[195][196][197][198][199][200][201][202]202] reports on the irradiation at HT using protons. Usually, the detectors are studied while operating in pulse (spectrometric) mode, and PHS are recorded versus temperature to measure the variation of the detector performances (CCE, energy resolution at FWHM, peak centroid, and area).…”
Section: Operation Of Diamond Detectors At High Temperaturementioning
confidence: 99%