Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

Gupta, S. Dutta; Lacour, Stéphanie P.

doi:10.1007/s11664-016-4449-x

Cited by 5 publications

(5 citation statements)

References 11 publications

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“…Ultimately, the device was cured for 1 hour at 150 °C in air to activate the channel. [44] In order Fabrication of the DEA: The fabrication of the DEAs with cross-sectional view is described in figure S6. It follows the protocol described in [45] .…”

Section: Unlike Lower Voltage Tfts the Hvtft Has An Almost Linear Dementioning

confidence: 99%

Flexible Zinc–Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

et al. 2017

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Flexible high-voltage thin-film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implements a zinc-tin oxide channel, a thick dielectric stack, and an offset gate. At a source-drain bias of 1 kV, the HVTFT has a 20 µA on-current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high-voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal-oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics.

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Section: Unlike Lower Voltage Tfts the Hvtft Has An Almost Linear Dementioning

confidence: 99%

Flexible Zinc–Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

et al. 2017

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“…Trapped dust particles (1–10 µm) during packaging can generate pinholes in the encapsulation layer (5 µm) supporting the isolation breakdown. Another possibility is the oxygen incorporation into the IGZO channel which could explain the TFTs performance deterioration as previously reported . The SMP encapsulation plays an important role to calculate the device lifetime in PBS or another solution.…”

Section: Resultsmentioning

confidence: 99%

“…[40,41] The SMP encapsulation plays an important role to calculate the device lifetime in PBS or another solution. Another possibility is the oxygen incorporation into the IGZO channel which could explain the TFTs performance deterioration as previously reported.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Highly Stable Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors on Deformable Softening Polymer Substrates

Gutiérrez-Heredia

Rodriguez‐Lopez

Garcia-Sandoval

et al. 2017

Adv Elect Materials

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more complex applications that more closely mimic the behavior and size scale of biology. To these ends, bioelectronic devices must demonstrate several critical features: be manufacturable via a repeatable fabrication processes; exhibit resistance to mechanical deformation; and demonstrate electrical reliability.Technologies based on TFTs allowed the microfabrication of large-area applications such as flat-panel displays, which were difficult to develop on flexible substrates due to their high temperature processing requirements and were difficult to develop on silicon due to the cost associated with using such a large area of silicon. After Nomura et al. presented TFTs based on indium-gallium-zinc-oxide (IGZO) semiconductors, these became the key component for the fabrication of system-on-glass applications. [9] The electrical performance of IGZO TFTs exhibited high-mobility values (>10 cm 2 V −1 s −1 ) compared with organic semiconductors (<0.1 cm 2 V −1 s −1 ) or amorphous silicon (≈1 cm 2 V −1 s −1 ). [9][10][11] More recently, IGZO has been reported with mobility values of 29 cm 2 V −1 s −1 by Jeon et al. to develop a voltage compensation circuit. [12] A transparent circuit based on IGZO TFTs with mobility of 70 cm 2 V −1 s −1 was presented by Liu et al. with frequency response on the order of megahertz. [13] In addition, Liu et al. incorporated silver nanowires into IGZO to achieve a mobility of 174 cm 2 V −1 s −1 , [14] but with limits on processing and scalability. Due to their relative low processing temperature requirements (compared with silicon technologies) and high-mobility, semiconductor devices made from IGZO allow for the development of emerging technologies such as flexible and wearable electronics: active-matrix phosphorescent organic light emitting diodes displays by O'Brien et al., [15] an amplifier by Münzenrieder et al., [16] and a full color organic light-emitting diodes (OLED)-based display [4] among others.There is a tradeoff among the various processing temperatures used during TFT fabrication, which affects electrical performance and the thermal compatibility with flexible substrates. Important performance characteristics of the electronic components include field effect mobility (μ FE ), threshold voltage (V TH ), changes in V TH (ΔV TH ), and subthreshold swing (SS). The use of elevated temperature during device processing can help improve the quality of amorphous IGZO, as well as its interface with a dielectric. According to Nomura, Flexible electronics are attracting great interest in healthcare, where devices such as thin-film transistors (TFTs) on polymer substrates facilitate biomedical applications requiring complex circuits in soft packages. Consequently, a repeatable process to fabricate reliable, stable electronic components on flexible substrates is required. Here, thermoset thiol-ene/acrylate shape memory polymer (SMP) substrates house indium-gallium-zinc-oxide (IGZO) TFTs and logic circuits: resulting devices exhibit stable behavior after thermal annealing at 250 °C. Fabr...

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“…Chemical stability is another challenging issue in conductive ZnO used in chemically harsh electronics such as chemical sensors, biosensors, and water-splitting devices because of the amphoteric nature of ZnO. ,,− It is widely accepted that ZnO thin films and nanostructures grown on substrates are easily dissolved in chemically active media, such as acidic or basic water solutions. ,, In aqueous solutions, zinc ion species such as Zn 2+ (aq) , ZnO (aq) , Zn(OH) 2(aq) , and Zn(OH) − (aq) may appear, as shown in the following reactions. Under acidic conditions, the dominant reactions of solid ZnO dissolution are shown in eqs and .…”

Section: Robustness and Stability Of Properties Under Harsh Environmentsmentioning

confidence: 99%

Robust and Electrically Conductive ZnO Thin Films and Nanostructures: Their Applications in Thermally and Chemically Harsh Environments

Yan

Takahashi

Zeng

et al. 2021

ACS Appl. Electron. Mater.

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Harsh electronics", which are designed to operate under harsh environments, have garnered significant attention to collect various physical and chemical information in surroundings toward the Internet of Things era. Among various electronic materials and structures, ZnO thin films, which consist of an abundant resource, have been intensively investigated because of their unique electrical and optical properties. However, ZnO thin films have been regarded as chemically nonresistive to harsh environments (e.g., high temperatures, high humidity, and acidic and basic conditions). Herein, we present recent progress and advances in electrically conductive ZnO thin films and nanostructures for applications in harsh electronics. First, various fabrication methods and progresses for achieving high-quality ZnO nanomaterials are introduced. Subsequently, previously reported approaches for enhancing the reliability and stability of ZnO nanostructures in harsh electronics are compared. Strategies for fabricating robust ZnO materials and ZnO-based electronics are discussed on the basis of several proposed mechanisms. Finally, we describe the current limitation, perspective, and outlook for future developments of ZnO nanostructures for use in harsh electronics.

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Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

Cited by 5 publications

References 11 publications

Flexible Zinc–Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Flexible Zinc–Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Highly Stable Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors on Deformable Softening Polymer Substrates

Robust and Electrically Conductive ZnO Thin Films and Nanostructures: Their Applications in Thermally and Chemically Harsh Environments

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