Performance of InGaAs metal-semiconductor-metal photodetectors on Si

Bartels, A.; Peiner, Erwin; Tang, Guangping; Klockenbrink, R.; Wehmann, H.-H.; Schlachetzki, A.

doi:10.1109/68.491590

Cited by 18 publications

(9 citation statements)

References 10 publications

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“…demonstrated a type of directly grown InP/InGaAs PD on a Si [001] substrate. [ 68 ] In the initial work, the measured dark current and bandwidth are 1

\umu A

and 1.5 GHz, respectively. Although the speed was not very high, it opened a door to directly grow III–V PDs on silicon photonics platform.…”

Section: High‐speed Photodetectorsmentioning

confidence: 99%

“…[38,39,68,[155][156][157][158][159][160][161][162][163][164][165][166] A two-step growth of GaAs accommodation and InP layers is commonly used. [38,39,68,156] InAlAs can also serve as a buffer layer. [155,163,165] More recently, a structure called InP on a planar Si (IoPS) has been demonstrated for III-V PD epitaxy, which involves first growing a buffer layer on Si and then growing an InP layer above such a buffer surface.…”

Section: Directly Grown Iii-v Photodetectorsmentioning

confidence: 99%

“…The first method is by inserting a thick buffer layer between the planar Si substrate and the top III-V epitaxy stacks. [38,39,68,[155][156][157][158][159][160][161][162][163][164][165][166] A two-step growth of GaAs accommodation and InP layers is commonly used. [38,39,68,156] InAlAs can also serve as a buffer layer.…”

Section: Directly Grown Iii-v Photodetectorsmentioning

confidence: 99%

See 2 more Smart Citations

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III-V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.

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“…demonstrated a type of directly grown InP/InGaAs PD on a Si [001] substrate. [ 68 ] In the initial work, the measured dark current and bandwidth are 1

\umu A

and 1.5 GHz, respectively. Although the speed was not very high, it opened a door to directly grow III–V PDs on silicon photonics platform.…”

Section: High‐speed Photodetectorsmentioning

confidence: 99%

Section: Directly Grown Iii-v Photodetectorsmentioning

confidence: 99%

Section: Directly Grown Iii-v Photodetectorsmentioning

confidence: 99%

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High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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“…Since C V " (*</*x) and C W " (*</*y) it follows from (16) and (18) that the semidiscrete di!erence approximation of equations (2) and (3) is…”

Section: Discretization In Space Variablesmentioning

confidence: 99%

Two-dimensional non-stationary numerical model for MSM structures

Radunović

Radunovic

1999

Int. J. Numer. Model.

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In this paper the solution of the non‐stationary model for MSM structures is obtained numerically. The two‐dimensional model consists of three singularly perturbed non‐linear partial differential equations. The alternating‐direction method for discretization in time and the non‐oscillatory streamline upwind method on a piecewise uniform grid for discretization in space are used to eliminate the interior and boundary layer oscillations. The described model is used for the analysis of the time response of a GaAs n‐type MSM structure to a Heaviside function form of the applied voltage. For the stationary case the I–V characteristic of the structure is determined. The numerical results confirm that the applied method is convenient for solving convection–diffusion problems. Copyright © 1999 John Wiley & Sons, Ltd.

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“…With respect to low production cost and high conversion efficiency of electric energy to optical energy, monolithic fabrication technologies are very attractive. Following this approach, highperformance laser diodes and photodetectors were realized using heteroepitaxy of III/V compound semiconductors on Si (see [9] and [10]). In the case of MEMS, optical interconnections between the sensor head and the controller provide immunity against EMI [7].…”

Section: Introductionmentioning

confidence: 99%

Microelectromechanical vibration sensor with optical interconnects

Peiner

Scholz

Fricke

et al. 1998

J. Microelectromech. Syst.

Self Cite

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A resonant vibration sensor realized using silicon micromachining for wear monitoring of rotating machinery is described. It comprises a mechanical resonator, piezoresistive bridge, and components for fiber-optical signal readout by an infrared light-emitting diode. The performance of the microsystem is demonstrated by its static and dynamical behavior. The results confirm that the described sensor has the potential for on-line vibration control of rotating machinery operated under the conditions of industrial production. [257]Index Terms-Bulk-micromachined piezoresistive transducer, fiber-optical readout, mechanical vibrations.

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Performance of InGaAs metal-semiconductor-metal photodetectors on Si

Cited by 18 publications

References 10 publications

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Two-dimensional non-stationary numerical model for MSM structures

Microelectromechanical vibration sensor with optical interconnects

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