Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture

Arredondo, B.; Dios, Cristina de; Vergaz, Ricardo; Criado, Á. R.; Romero, B.; Zimmermann, Birger; Würfel, Uli

doi:10.1016/j.orgel.2013.06.018

Cited by 35 publications

(27 citation statements)

References 38 publications

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“…[6]. Here, the dark current density (J dark ) is dominated by the shot noise (2q J dark ) The detectivity is calculated by Equation (??)…”

Section: Resultsmentioning

confidence: 99%

“…To measure the photo response of our devices, we used a pulsed laser diode (LD) light source and measured the rise and fall times of the photocurrent on an oscilloscope. The shape of the response is based on the resistances and capacitance, which cause changes with respect to rise time and fall time [6]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Buffer layers has been developed using metal compounds, organic material and metals [5][6][7][8][9][10][11]. OPDs are often used to reduce the dark current density as electron/ hole blocking layers.…”

Section: Introductionmentioning

confidence: 99%

“…To reduce the dark current density, buffer layers are used with materials of low work function, such as ZnO, NiO and LiF which have wide bandgaps, in organic electronic devices. Of these, LiF/Al composite cathodes are known for their superior electron injection and high electroluminescence in organic light emitting diodes (OLED), and for their reduced dark current density and high detectivity in OPDs [6,12,13]. In a previous study, we demonstrated the properties of ytterbium (Yb) with low work functions as an ETL in organic photovoltaic (OPV) devices and compared its performance to that of LiF [14].…”

Section: Introductionmentioning

confidence: 99%

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Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

Lim

Kim

et al. 2016

Journal of the Korean Physical Society

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Photodiodes are widely used to convert lights into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low visible wavelength sensitivity due to their infrared wavelength absorption. Recently, electrical conducting polymer-based photodiodes have received significant attention due to their flexibility, low cost of production and high sensitivity of visible wavelength ranges. In the present work, we fabricated an organic photodiode (OPD) consisting of ITO/ NiOx/ P3HT:PC 60 BM/ YbF 3 / Al. In the OPD, a yitterbium fluoride (YbF 3 ) buffer layer was used as the electron transport layer. The OPD was analyzed for its optical-electrical measurements, including J-V characteristics, detectivity and dynamic characteristics. We have investigated the physical effects of the YbF 3 buffer layer on the performance of OPD such as its carrier extraction, leakage current and ohmic characteristics.

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“…[6]. Here, the dark current density (J dark ) is dominated by the shot noise (2q J dark ) The detectivity is calculated by Equation (??)…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

Lim

Kim

et al. 2016

Journal of the Korean Physical Society

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“…The transient response result shows a rise time (the time for the current rising from 10% to 90% of the peak value) of 35 μs and a fall time (the time for the current dropping from 90% to 10% of the peak value) of 55 μs. The bandwidth is defined as the frequency of the light at which the photoresponse is −3 dB and, in this case, the bandwidth is 2.8 MHz, which is considerably high because the regular bandwidth of the photodetector based on P3HT:PC 61 BM is generally lower than 1 MHz …”

mentioning

confidence: 99%

High‐Performance Polymer Photodetector Using the Non‐Thermal‐and‐Non‐Ultraviolet–Ozone‐Treated SnO₂ Interfacial Layer

Deng

Yan

Deng

et al. 2019

Physica Rapid Research Ltrs

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In organic or perovskite photovoltaic‐type devices, to improve device performance, the thermal and ultraviolet–ozone (UVO) treatments are usually critical for the metal oxide film fabrication by removing the interfacial layer induced defects. However, the defects might play the opposite role in photoconductive photodetectors, where the defect‐induced photogenerated charge accumulation can lead to a tunneling current. Herein, a high‐performance solution‐processed broadband organic photodetector (OPD) in the visible wavelength is realized and characterized by introducing the non‐thermal‐and‐non‐UVO‐treated SnO2 nanoparticle film between the indium tin oxide (ITO) electrode and the active layer of the poly(3‐hexylthiophene) (P3HT):phenyl‐C61‐butyric‐acid‐methyl‐ester (PC61BM) blend. The untreated SnO2 nanoparticle layer can efficiently block the external charge injection, which considerably reduces the dark current density. Under illumination, the photogenerated charges are accumulated at the interface between the SnO2 layer and the active layer, and thus contribute a tunneling injection, resulting in a significantly high photocurrent. Therefore, the OPD shows a high performance in every figure of merit: external quantum efficiency (EQE) of 1430%, responsivity of 6.97 A W−1, detectivity of 2.29 × 1013 Jones, and −3 dB bandwidth of 2.8 MHz. The solution‐processed high‐performance photodetectors without thermal and UVO treatments are highly compatible with low cost, flexible, and large‐area electronics.

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Polymer Nanocomposites for Photodetectors

Khan

Wen

Sun

2021

Polymer Nanocomposite Materials

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Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture

Cited by 35 publications

References 38 publications

Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

High‐Performance Polymer Photodetector Using the Non‐Thermal‐and‐Non‐Ultraviolet–Ozone‐Treated SnO₂ Interfacial Layer

Polymer Nanocomposites for Photodetectors

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Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture

Cited by 35 publications

References 38 publications

Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

Reduction of the dark current in a P3HT-based organic photodiode with a ytterbium-fluoride buffer layer for electron transport

High‐Performance Polymer Photodetector Using the Non‐Thermal‐and‐Non‐Ultraviolet–Ozone‐Treated SnO2 Interfacial Layer

Polymer Nanocomposites for Photodetectors

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Product

Resources

About

High‐Performance Polymer Photodetector Using the Non‐Thermal‐and‐Non‐Ultraviolet–Ozone‐Treated SnO₂ Interfacial Layer