Performance of modulation-doped charge-coupled devices (MD-CCD's) in the microwave and millimeter-wave bands

Simulation of Charge Transfer Process in a 2DEG-CCD

“…Charge packets in a 2DEG-CCD are normally attracted to wells of higher potential, and as these wells fill up, their potential level reduces accordingly, and vice versa, as can be derived from equation (1). In the simulation, Charges signal were assumed to be confined initially under the first electrode.…”

“…Microwave frequency filters such as , transversal filtering, correlation, and variable delay line could be accomplished by the CCDs based on this technology. These filters would find many uses in microwave frequency applications such as personal mobile communication devices and in the communication systems [1]- [5]. In this work, charge transfer process of a 2DEG-CCD by ensemble Monte Carlo method is simulated.…”

Simulation and Design of AlGaAs/InGaAs CCDs Based on pHEMT Technology

“…The simplified structure and the band diagram of two different double delta doped heterostructure CCDs which represent a development and improvement on the buried channel heterojunction CCD reported in [1] are shown in Fig. 1 (1 st structure) and Fig.…”

“…Silicon based buried channel and surface channel CCDs are best suited for these low frequency applications as the technology is well established but, for microwave frequency applications, alternative device structures such as heterojunction CCDs [1][2][3][4][5] will have to be considered. Heterostructure CCDs are preferred over silicon or gallium arsenide based structures because of the higher electron mobility and higher saturation velocity of carriers in the transport channel of these structures.…”

“…Heterostructure CCDs are preferred over silicon or gallium arsenide based structures because of the higher electron mobility and higher saturation velocity of carriers in the transport channel of these structures. It has previously been reported that heterostructure CCDs are limited only by the saturation velocity of the carriers which results in an upper frequency limit of approximately 40 GHz [1].…”