2023
DOI: 10.21203/rs.3.rs-2996551/v1
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Performance of monolayer Black Phosphorus DG-JLFET: An ab initio study

Abstract: Two-dimensional materials are very promising for ultra-short channel future devices. This paper investigates, for the first time, the viability of the junction less transistors based on 2-D materials for future state-of-the-art technology nodes. Specifically, we investigate the performance of a Junction less monolayer black phosphorus (BP) FET (JLFET) with 12nm gate length using ab initio quantum transport simulations. The electrostatic control mechanism of the device and various intrinsic static and dynamic c… Show more

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