2017
DOI: 10.3390/app7040380
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Performance of Nanostructures within InGaN-Based Multiquantum-Well Light-Emitting Devices

Abstract: Abstract:We introduced multiquantum-barrier (MQB) nanostructures into the barrier layers of InGaN/GaN multiquantum-well (MQW) heterostructures to improve the operation characteristics of the light-emitting devices. The electroluminescence (EL) spectra were examined over a broad range of temperatures for the samples. We observed inhibited carrier leakage for the sample with the MQB nanostructures. Greater inhomogeneity of nanocrystallite size and a stronger localization effect were also observed for the sample.… Show more

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