Performance of new Micro-pixel Avalanche Photodiodes from Zecotek Photonics

Sadygov, Z.; Zerrouk, A. F.; Ariffin, A.; Khorev, S. V.; Sasam, J.; Zhezher, V.; Anphimov, N.V.; Dovlatov, A.; Musaev, M. A.; Muxtarov, R.; Safarov, N. A.

doi:10.1016/j.nima.2009.05.123

Cited by 13 publications

(11 citation statements)

References 2 publications

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“…The large number of pixels in this device is possible due to Zecotek's "novel approach to APD design […] based upon epitaxial structures grown on silicon substrate with deeply buried isolated avalanche channels" [4]. The quenching is done by potential walls instead of resistors [5]. With the high pixel density, a large dynamic range can be covered.…”

Section: Preselection Of Sipm Typesmentioning

confidence: 99%

Silicon photomultiplier properties at cryogenic temperatures

Biroth

Achenbach

Downie

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Preselection Of Sipm Typesmentioning

confidence: 99%

Silicon photomultiplier properties at cryogenic temperatures

Biroth

Achenbach

Downie

et al. 2015

Nuclear Instruments and Methods in Physics Research Section A:

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“…1a). To improve field homogeneity on n-Si (1) surface n + type thin layer (2) has been formed by ion doping. The choice of As ions instead of conventional P (phosphors) is related to its low diffusion rate at epitaxial layer deposition.…”

Section: Production Technologymentioning

confidence: 99%

“…With various scintillation crystals MAPD can be used for making position and sensitive detectors of elementary particles and -radiation with high energy resolution. MAPD construction involves pixel matrix of individual n + -regions of 2-5 µ in diameter deeply buried into epitaxial layer of Si p-type conductivity grown on the surface of n-type Si substrate [1,2,[4][5][6][7]. It allows the device high density of pixel for providing wide region of photoresponse linearity to be created [3].…”

mentioning

confidence: 99%

Inductive Type Impedance of High Sensitivity Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Jafarova¹,

Sadygov²,

Dovlatov³

et al. 2017

JEE

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There have been investigated reactive properties of silicon avalanche photodiodes (MAPD-micropixel avalanche photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f = 50-500 kHz. By experiment it is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with U for (negative potential is applying to n-Si substrate) reaches maximum and at certain value U for = U inv changes the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at U for = 1.0 V (f = 500 kHz). There has been calculated difference in phase  appearing between current and voltage and it is shown that at U for = 0 V the  = 80 o and passes through the zero at U for = 0.55V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

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“…MAPD have gained nide utilaziation at creating devices and equipment for scientific research, radiation control devices, medical research equipment and many fields of science and technology where ultrasensitive photo-detectors are needed. With various scintillation [2], [4]- [7]. It allows the device high density of pixel for providing wide region of photoresponse linearity to be created [3].…”

Section: Introductionmentioning

confidence: 99%

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Jafarova

Sadygov

Dovlatov

et al. 2018

EJERS

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There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance).The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase j appearing between current and voltage and it is shown that at Ufor=0 V the j = 80o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

show abstract

Performance of new Micro-pixel Avalanche Photodiodes from Zecotek Photonics

Cited by 13 publications

References 2 publications

Silicon photomultiplier properties at cryogenic temperatures

Silicon photomultiplier properties at cryogenic temperatures

Inductive Type Impedance of High Sensitivity Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

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