Performance of PT/CRSE Schottky diodes designed for 5G/6G technology applications

Abstract

Herein thin films of CrSe deposited by the thermal evaporation technique onto Pt substrates are designed as Schottky diodes. It is observed that the Pt/CrSe/C (PCC) Schottky diodes are of tunneling type showing barrier height and widths of 0.56 eV and 18 nm, respectively. These diodes displayed biasing dependent nonlinearity and negative slope of differential resistance. The analyses of the cutoff frequency spectra indicated that PCC devices can exhibit high cutoff frequency up to 17 GHz based on the driving signal frequency. The features of the PCC devices make it promising as electronic component suitable for 5G/6G technology applications.