Performance of small-pitched Hg 1-x Cd x Te photoconductors based on MBE-grown multilayer structures

Comparative analysis of low-doped bulk, LPE and MBE grown n-Hg 1-x Cd x Te material and photoconductors based on it

“…1 ( ω -light modulation frequency, τ -excess charge carriers' lifetime) and with zero boundary conditions at contact. For PC based on low-doped n-type V R is given by expression 11 : In pure Hg 1-x Cd x Te crystals there are two band-to-band processes which control total recombination rate: radiative recombination and Auger recombination due to transitions A1 and/or A7. Evidently from (4) and (3) …”

“…8 and 9. Experimental curves are compared with theoretical curves calculated following to formulae 11 . Measured peak detectivity are close to detectivity calculated for model photoconductor in wide range of background flux density at least for FOV=θ from 180 0 to 30 0 and reaches R v (λ p ) ≈ 10 11 Jones.…”