Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications

Bellil, W.; Aissat, A.; Vilcot, Jean-Pierre

doi:10.1016/j.ijleo.2018.06.142

Cited by 2 publications

(2 citation statements)

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“…β-(Al x In y Ga 1−x−y ) 2 O 3 alloys) is non-existent in literature by far. It is important to point out that quaternary alloy layer has been implanted in well-established III-Nitride and III-V materials class to achieve desirable device performance [4,6,[31][32][33][34][35][36][37][38][39][40][41][42][43]. Quaternary alloys typically allow large tuning range of structural, electronic and optical properties that are different from the host material.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, lattice-matched structures will lead to lower defect densities in materials, enabling higher performance in the devices. Notable use of quaternary alloy includes the AlInGaN electron blocking layer for III-Nitride light emitting diodes [4,6], dilute-nitride AlGaAsN for high efficiency solar cell [40] and AlInGaAs/InGaAs for strained quantum well laser [43]. Interestingly, there has been no heterostucture design of (Al x In y Ga 1−x−y ) 2 O 3 /Ga 2 O 3 , even though the quaternary alloy would potentially provide properties tuning flexibility in Ga 2 O 3 based devices.…”

Section: Introductionmentioning

confidence: 99%

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First-principle investigation of monoclinic (Al _x In _y Ga_1−x−y)₂O₃ quaternary alloys

Liu¹,

Tan²

2020

Semicond. Sci. Technol.

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First-principle density functional theory calculations were performed to explore electronic and structural properties of β-(Al x In y Ga 1−x−y ) 2 O 3 quaternary alloys with both Al-content (x) and Incontent (y) ranging from 0% to 18.75%. The β-(Al x In y Ga 1−x−y ) 2 O 3 quaternary alloys exhibit indirect band gap property with the bandgap energy varying from 4.432 to 5.171 eV. Electron effective masses are also presented for β-(Al x In y Ga 1−x−y ) 2 O 3 quaternary alloys, showing a general reduction with In-content increases but a general increment with Al-content increases in the material. Further analysis indicates the possibility of achieving lattice-matched or nearlattice-matched β-(Al x In y Ga 1−x−y ) 2 O 3 /β-Ga 2 O 3 structures system, which is critical for high performance field effect transistor and deep ultraviolet photodetector applications. Our work shows that the β-(AlInGa) 2 O 3 alloys with proper tuning of Al-and In-content have strong potential to be used as part of the epitaxial layers for β-Ga 2 O 3 -based material system.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First-principle investigation of monoclinic (Al _x In _y Ga_1−x−y)₂O₃ quaternary alloys

Liu¹,

Tan²

2020

Semicond. Sci. Technol.

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Theoretical electronic and optical properties of AlGaAsN/GaAs quantum well using 10 band kp approach

2023

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Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications

Cited by 2 publications

References 34 publications

First-principle investigation of monoclinic (Al _x In _y Ga_1−x−y)₂O₃ quaternary alloys

First-principle investigation of monoclinic (Al _x In _y Ga_1−x−y)₂O₃ quaternary alloys

Theoretical electronic and optical properties of AlGaAsN/GaAs quantum well using 10 band kp approach

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Performance of the structure AlxGa1-xAs1-yNy/Ge for solar cell applications

Cited by 2 publications

References 34 publications

First-principle investigation of monoclinic (Al x In y Ga1−x−y )2O3 quaternary alloys

First-principle investigation of monoclinic (Al x In y Ga1−x−y )2O3 quaternary alloys

Theoretical electronic and optical properties of AlGaAsN/GaAs quantum well using 10 band kp approach

Contact Info

Product

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First-principle investigation of monoclinic (Al _x In _y Ga_1−x−y)₂O₃ quaternary alloys

First-principle investigation of monoclinic (Al _x In _y Ga_1−x−y)₂O₃ quaternary alloys