Performance of μ-Si:H Solar Cells with Amorphous P-Layer

Siebke, F.; Yata, Shigeo; Hishikawa, Yoshihiro; Tanaka, Makoto

doi:10.1557/proc-507-517

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…Such characteristics could only be modeled for i-layers consisting of two distinctly different layersa widegap amorphous layer and a narrow gap microcrystalline one. Such an approach was also successful in simulating the results of earlier studies of intrinsic µc-Si:H growth on p-a-SiC:H [20]. The results of the simulation for cell C is shown as a solid line in Fig.…”

Section: Resultsmentioning

confidence: 71%

Evolution of the Mobility Gap with Thickness in Hydrogen-Diluted Intrinsic Si:H Materials in the Phase Transition Region and Its Effect on p-i-n Solar Cell Characteristics

et al. 2001

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Insights into the growth processes and evolution of microstructure in intrinsic hydrogenated silicon (Si:H) films obtained from real-time spectroscopic ellipsometry (RTSE) are extended to the characterization of the optoelectronic properties of the corresponding solar cells. To assess the effects of transition regions from the amorphous to mixed microcrystalline phases, cell structures with and without such regions at different depths in the i-layer from the p-contact have been investigated. Experimental results are presented that clearly demonstrate changes in the mobility gap, Eµ, of the materials as their microstructure evolves with thickness, further supporting the important effect of the hydrogen dilution ratio R (R[H2]/[SiH4]) on the transition between the amorphous and microcrystalline phases. Light J-V characteristics at room temperature and dark J-V characteristics at different temperatures were measured on p(a-SiC:H:B)-i(Si:H)-n(µc-Si:H:P) solar cell structures with i-layers of different thicknesses and R values. The mobility gaps of both the amorphous and microcrystalline intrinsic-layer materials as well as those of the transition layers are obtained from dark J(V,T) measurements. Using numerical simulation, both the light and the dark J-V characteristics are self-consistently modeled assuming sharp changes in the mobility gaps at the intrinsic layer transition thicknesses determined by RTSE.

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Section: Resultsmentioning

confidence: 71%

Evolution of the Mobility Gap with Thickness in Hydrogen-Diluted Intrinsic Si:H Materials in the Phase Transition Region and Its Effect on p-i-n Solar Cell Characteristics

et al. 2001

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“…Surface treatments can also impact the growth and nucleation of the microcrystalline phase. 25,26 For example, Koh et al have investigated the eect of using H 2 plasma pretreatments on a-Si : H i-layers on the nucleation of a subsequent p-layer. 26 They found that with the H 2 plasma pretreatments, they were able to promote immediate nucleation of microcrystalline material.…”

Section: Amorphous Silicon-based Thin-®lmsmentioning

confidence: 99%

Process integration issues in thin‐film photovoltaics and their impact on future research directions

Sheldon

2000

Prog. Photovolt: Res. Appl.

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Thin-®lm device processing relies heavily on the integration of a variety of materials and a wide array of process steps. These include in some instances, the integration of wet' (chemical etching) and`dry' (deposition and plasma etching) process steps. As substrates are stepped through the process sequence, there are many surfaces that ultimately become interfaces that can have a dramatic impact on ultimate device performance. However, in thin-®lm R&D, these issues are not always carefully considered. This can have severe consequences when adapting an R&D-developed process into pilot production, and ®nally, into manufacturing. In this paper, we explore the impact of process integration issues on the microstructure and device performance for three prominent photovoltaic thin-®lm technologies (cadmium telluride, copper indium diselenide, and amorphous silicon). We also consider the impact of these concepts on future research directions in thin-®lm photovoltaics.

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Process integration issues in thin-film photovoltaics and their impact on future research directions

Sheldon

2000

Prog. Photovolt: Res. Appl.

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Thin‐film device processing relies heavily on the integration of a variety of materials and a wide array of process steps. These include in some instances, the integration of ‘wet’ (chemical etching) and ‘dry’ (deposition and plasma etching) process steps. As substrates are stepped through the process sequence, there are many surfaces that ultimately become interfaces that can have a dramatic impact on ultimate device performance. However, in thin‐film R&D, these issues are not always carefully considered. This can have severe consequences when adapting an R&D‐developed process into pilot production, and finally, into manufacturing. In this paper, we explore the impact of process integration issues on the microstructure and device performance for three prominent photovoltaic thin‐film technologies (cadmium telluride, copper indium diselenide, and amorphous silicon). We also consider the impact of these concepts on future research directions in thin‐film photovoltaics. Published in 2000 by John Wiley & Sons, Ltd.

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Performance of μ-Si:H Solar Cells with Amorphous P-Layer

Cited by 4 publications

References 8 publications

Evolution of the Mobility Gap with Thickness in Hydrogen-Diluted Intrinsic Si:H Materials in the Phase Transition Region and Its Effect on p-i-n Solar Cell Characteristics

Evolution of the Mobility Gap with Thickness in Hydrogen-Diluted Intrinsic Si:H Materials in the Phase Transition Region and Its Effect on p-i-n Solar Cell Characteristics

Process integration issues in thin‐film photovoltaics and their impact on future research directions

Process integration issues in thin-film photovoltaics and their impact on future research directions

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