Performance optimization of solar cells using non-polar, semi-polar and polar InGaN/GaN multiple quantum wells alongside AlGaN blocking layers

Nath, Pramita; Biswas, Abhijit; Nath, Vijay

doi:10.1007/s00542-020-04953-z

Cited by 9 publications

(6 citation statements)

References 28 publications

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“…To simplify the calculation, h was assumed to be unity (100%). 46,48 It is noteworthy to mention that the G values obtained from eqn (7) are underestimated due to the assumption of h to be unity i. 1.…”

Section: Resultsmentioning

confidence: 99%

“…This article replaces the version published on the 30th of September, which contained an error in eqn (7).…”

Section: Author Contributionsmentioning

confidence: 99%

“…Ternary group III-nitride semiconductors such as InGaN, AlGaN, and InAlN have been widely utilized in multiple optoelectronic device applications such as ultraviolet detectors, light emitting diodes (LEDs), laser diodes (LDs), transistors, and solar cells. [1][2][3][4][5][6][7] Among these, indium aluminium nitride (InAlN or In x Al 1−x N) has been less explored than the other two compounds. Recently, the In x Al 1−x N system has attracted attention due to its tunable and broad direct band gap ranging from 0.7 eV (InN) in the infrared (IR) region to 6.2 eV (AlN) in the ultraviolet (UV) region 8,9 by changing the atomic ratio of In/Al.…”

Section: Introductionmentioning

confidence: 99%

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Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

et al. 2022

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Section: Resultsmentioning

confidence: 99%

“…This article replaces the version published on the 30th of September, which contained an error in eqn (7).…”

Section: Author Contributionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

et al. 2022

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“…Therefore, it is necessary to revise the production line plan. Through analysis, it is found that the reason for the bad posture is due to the low height of the storage point and the machine tool [ 23 , 24 ]. Taking into account the actual production situation, the physical height of the storage point and station 1 can be increased by 50 cm and the OWAS report and BSHA report as shown in Figure 2 can be obtained.…”

Section: Results Analysismentioning

confidence: 99%

Research on Virtual Human Motion Control Based on Computer-Assisted Multimedia Simulation

Jin

Zheng

2022

Computational Intelligence and Neuroscience

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In order to reproduce realistic human motion in a virtual environment, a study of virtual human motion control based on computer-aided ergonomics simulation is proposed. First, we establish the required human body, workpiece, and production line simulation environment, and on this basis, we use OWAS, BSHA, and other analysis tools to carry out ergonomic simulation of virtual human motion simulation research, seek solutions to man-machine problems, and provide a new, efficient, and quantitative evaluation method for production line planning. The simulation results show that during the operation of virtual human 1, the ratio of the actual load on the left and right hands to the ultimate load has reached up to 70%. Therefore, it is necessary to revise the production line plan, and through analysis, it is concluded that the reason for the bad posture is due to the low height of the storage point and the machine tool. We believe that with continuous development, ProcessSimulate and ProcessDesigner will play a greater role in enterprise digitization.

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“…The alloy of InGaN has a higher radiation tolerance 3 and efficient charge carrier transportation, 4 which makes InGaN a novel material for making space solar cells. 5 However, they are some key challenges to utilizing the full potential of the InGaN alloy. The major hurdle lies on the growth of InGaN with a high indium (In) content.…”

Section: Introductionmentioning

confidence: 99%

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

Warepam,

Singh,

Dhar

2024

J. Nanophoton.

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The band-gap of In x Ga 1−x N can cover a wide range of electromagnetic radiation of the solar spectrum and offers a method for using it in photovoltaic solar cells. A solar cell structure consisting of In x Ga 1−x N∕GaN superlattice (SL) piled up between p-GaN and n-GaN is modeled and simulated. The impact of variations in the indium mole fraction and step graded SL having different quantum well thicknesses are analyzed. The results indicate that high indium content leads to lattice mismatch, decrement of fill factor, and development of strain in the quantum wells that reduce the overall efficiency. To increase the efficiency of the solar cell, a step graded 20 SL with a 5 nm quantum well thickness is introduced, and the highest efficiency of 22.6% is obtained. The use of a step graded SL InGaN cell allows for constructing real structures with the possibility of obtaining the enhanced power conversion efficiency compared with a conventional quantum well solar cell using SILVACO TCAD.

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Performance optimization of solar cells using non-polar, semi-polar and polar InGaN/GaN multiple quantum wells alongside AlGaN blocking layers

Cited by 9 publications

References 28 publications

Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

Research on Virtual Human Motion Control Based on Computer-Assisted Multimedia Simulation

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

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