Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates

Abstract

RFMD, Infrastructure Product Line 10420-A Harris Oaks Blvd Charlotte, NC, 28269AlGaN/GaN High Electron Mobility Transistors (HEMTs) are receiving considerable attention as a technology that is well suited for high power, high efficiency, radio frequency(RF) and microwave applications. The demonstration of attractive performance of GaN based HEMT technology for applications such as wireless basestations, has been successfully achieved by several organizations, including RFMD. Development efforts are now directed toward understanding and resolving the issues associated with the manufacturability and reliability of this technology. We report on the status of this technology at RFMD with respect to the goals delivering a manufacturable and reliable GaN HEMT device technology. The material growth and process technology will be described. Results of device performance, wafer fab repeatability, and technology reliability are reported.

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

“…Gallium nitride (GaN) is an important semiconductor material, for example, GaN high‐electron‐mobility transistors (HEMTs) . Silicon carbide (SiC) has a high thermal conductivity (approximately 450 W m −1 K −1 ), which makes it to be as a standard substrate material and provide decent heat spreading for GaN‐based devices.…”

“…Gallium nitride (GaN) is an important semiconductor material, for example, GaN high-electron-mobility transistors (HEMTs). [1][2][3] Silicon carbide (SiC) has a high thermal conductivity (approximately 450 W m −1 K −1 ), which makes it to be as a standard substrate material and provide decent heat spreading for GaN-based devices. However, with the further increasing power of GaN devices, the high heat flux generated makes the near-junction thermal management demand higher heat dissipation from the substrate material because heat removal near the junction becomes increasingly important for device performance and reliability.…”