This study investigates a photodetector design using the nontoxic, all‐inorganic perovskite material RbGeI3, which is distinguished by its efficient light absorption and excellent photoelectric conversion properties. Incorporating copper bismuth thiocyanate (CBTS) and indium gallium zinc oxide layers, this design enhances charge transport, leading to a photodetector that exhibits exceptional sensitivity across the visible spectrum, along with a peak responsivity of 0.63 A W−1 and a detectivity of 1.37 × 1013 Jones in the near‐infrared (NIR) at 900 nm. The proposed photodetector exhibits wide‐spectrum detection, encompassing both the visible range and the NIR region. These results position RbGeI3 and CBTS as compelling alternatives to traditional photodetector materials such as Si‐Ge, InGaAs, ZnO, and GaN. Validation is achieved through simulations using the SCAPS‐1D simulator, underscoring the potential of perovskite materials for advanced photodetector applications.