Performance Trade Offs in the Quantum Well Infra-Red Detector

Kane, Michael J.; Millidge, S.; Emeny, M. T.; Lee, D.; Guy, D.R.P.; Whitehouse, C. R.

doi:10.1007/978-1-4615-3346-7_3

Cited by 14 publications

(3 citation statements)

References 13 publications

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“…Dark current in the HEIWIP structure is a sum of the thermoemission current over the barrier and the tunneling current through the barrier (Perera et al, 1995). The thermionic current in the HEIWIP structure can be described in the frame of the 3D carrier drift model (Kane et al, 1992). The measured and calculated dark currents and the 300 K photocurrent for a HEIWIP detector with a threshold frequency of 4.6 THz at various temperatures are shown in Figure 6.…”

Section: Dark and Noise Currentmentioning

confidence: 99%

Terahertz Detection Devices

Perera

Ariyawansa

Matsik

2011

Comprehensive Semiconductor Science and Technology

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Section: Dark and Noise Currentmentioning

confidence: 99%

Terahertz Detection Devices

Perera

Ariyawansa

Matsik

2011

Comprehensive Semiconductor Science and Technology

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“…The expressions (1), (2) and (3) are respectively due to Levine [8], Schneider and Liu [15] and Kane [16]. [17].…”

Section: A High Temperature Regime Modellingmentioning

confidence: 99%

Ultimate performance of quantum well infrared photodetectors in the tunneling regime

Lhuillier¹,

Ribet-Mohamed²,

Tauvy³

et al. 2009

Infrared Physics & Technology

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Thanks to their wavelength diversity and to their excellent uniformity, Quantum Well Infrared Photodetectors (QWIP) emerge as potential candidates for astronomical or defense applications in the very long wavelength infrared (VLWIR) spectral domain. However, these applications deal with very low backgrounds and are very stringent on dark current requirements. In this paper, we present the full electro-optical characterization of a 15µm QWIP, with emphasis on the dark current measurements. Data exhibit striking features, such as a plateau regime in the I(V) curves at low temperature (4 to 25 K). We show that present theories fail to describe this phenomenon and establish the need for a fully microscopic approach.

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“…6-9. Although the goal is reached, there is always a concern to saturate the read-out circuit in the practical application. To cut down the dark current, a wide barrier 10 or a low doping density 11 has been used but the temperature for background limited performance has still not arrived at 77K. In 1993, Choi et al proposed an infrared hot-electron transistor for 77K operation and an energy filter was used to select the photocurrent.…”

Section: Introductionmentioning

confidence: 99%

<title>Investigation of supperlattice infrared photodetectors to reach the background-limited performance at high temperature</title>

Kuan

Hsieh

Lin

et al. 2001

Photodetectors: Materials and Devices VI

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We have first investigated three superlattice infrared photodetectors in order to raise their temperature for the background limited performance. Their basic structure is a 20-period GaAs(6nm)/Al 0.32 Ga 0.78 As(4nm) superlattice sandwiched between two 50nm Al x Ga 1-x As blocking layers. We changed the barrier height (x) of the blocking layers and the well doping density (N d ) to see their effects on the temperature for the background limited performance. Three samples were grown with molecular beam epitaxy. The associated parameters (x, N d ) of Devices A, B and C are (0.28, 10 18 ), (0.28, 10 17 ) and (0.24, 10 17 ) respectively. The unit for N d is cm -3 . The comparison between A and B is to see the effect of the doping density while that between B and C is the barrier height. The I-V characteristics of the three detectors at various temperatures have been investigated carefully. Two important experimental results have been concluded. A high doping density not only decreases the activation energy and increases the dark current but also increases the impurity scattering for the photoelectrons. For the dark current, high activation energy puts down the dark current and extends the dominant region of the thermionic emission current. Applying those results, we changed the parameters into (0.32, 5x10 16 ) and successfully fabricated a superlattice infrared photodetector to reach the background limited performance at 77K. The * BLIP Dfor the detector at 77K with wavelength 8.81 µm is 4.3 x 10 9 cm Hz /W.

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Performance Trade Offs in the Quantum Well Infra-Red Detector

Cited by 14 publications

References 13 publications

Terahertz Detection Devices

Terahertz Detection Devices

Ultimate performance of quantum well infrared photodetectors in the tunneling regime

<title>Investigation of supperlattice infrared photodetectors to reach the background-limited performance at high temperature</title>

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