Performance variation with pristine and doped high‐k materials via atomic layer deposition

Abstract

This review examines the performance variations of pristine and doped high‐k materials deposited using atomic layer deposition (ALD). This paper explores the fundamental principles of ALD and its application in creating high‐k materials with superior dielectric properties. High‐k materials such as HfO2, TiO2, and ZrO2 are critical in the semiconductor industry due to their high dielectric constants and ability to improve device performance. The review highlights how doping these materials can further enhance their electrical, chemical, and physical properties, leading to improved device reliability and efficiency. Various dopants and their effects on material characteristics, including dielectric constant, leakage current, and breakdown voltage, are discussed in detail. This paper concludes that ALD, with its precise control over film thickness and uniformity, is essential for the ongoing advancement of semiconductor technology and the development of next‐generation electronic devices.