Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study

Hamdani, Dadan; Cahyono, Yoyok; Yudoyono, Gatut; Darminto, Darminto

doi:10.1080/15421406.2021.1922226

Cited by 5 publications

(13 citation statements)

References 38 publications

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“…This will explain some electrical changes over the simulation process by various input parameters, resulting in an electrical difference on VOC, JSC, FF and Eff, as shown in equations (1)(2)(3)(4). Those data used to represent value of solar cell energy conversion efficiency depicted on J-V curve diagram [11].…”

Section: A Methodologymentioning

confidence: 99%

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

Satriani

Munir

Natalisanto

et al. 2023

ELKHA

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Numerical simulation on HIT (Heterostructure with Intrinsic Thin Layer) solar cell using hetero-structure ITO/(p+)a-Si:H/(i)a-Si:H/(n)c-Si/Al solar cell has been done using AFORS-HET (Automate For Simulation of Heterostructure) software. The purpose of this study is to provide validation as well optimization model of solar cell enhanced performances. Data analysis shows a significant increase on solar power generation. An intrinsic thin layer given between the hetero-interface to reduce defect properties on solar cell structure. The optimization using an optimal value of acceptor-donor doping, dangling-bond defects ( ), thin conductive oxide work function ( ), and other input shows a reducing recombination-rates, as a validation Figure of Merits (FOMs) data reach a maximum efficiency value at 23,67% ( = 634,2 mV; = 51,2 mA/cm2; = 72,91%, this result achieved on peak data such = 5,2 eV, Na (doping) = 5.0 x 1019 cm-3, = 1.0 x 1018 cm-3, (interface defect) = 1.0 x 1010 cm-3. The results obtained from this simulation produce a number of optimum parameters that can be followed up experimentally to obtain better solar cell performances.

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Section: A Methodologymentioning

confidence: 99%

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

Satriani

Munir

Natalisanto

et al. 2023

ELKHA

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“…Setiap lapisan semikonduktor sel surya dinyatakan dalam persamaan Poisson dan persamaan transport untuk elektron dan hole dipecahkan dalam model persamaan 1D. Model lapisan "bulk" dalam AFORS-HET untuk menjelaskan model matematis sel surya p-i-n menggunakan model Standar Semikonduktor [16] ) ditentukan berdasarkan nilai fungsi kerja WFTCO [17]. Asumsi bahwa pada bagian belakang struktur sel surya tidak disertai dengan pemantul belakang (RB), sehingga koefisien refleksinya 0, dan koefisien refleksi kontak depan (RF) dibuat sekitar 0.2 [18].…”

Section: Metode Penelitianunclassified

“…Parameter input lain yang digunakan dalam simulasi mengacu pada Tabel. 1 [15,17,20,21]. Parameter yang digunakan untuk mengukur kinerja sel surya yang diperoleh dengan mengekstraksi kurva J-V, meliputi [17]:…”

Section: Metode Penelitianunclassified

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Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Hamdani

2022

JIIF

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Validasi numerik terhadap sel surya homojunction berbasis a-Si:H hasil eksperimen secara fisis dianalisis menggunakan perangkat AFORS-HET (Automat FOR Simulation of HETerostructure) dengan meninjau pengaruh cacat dangling-bond (DB) pada lapisan (p)a-Si:H (Ntr) terhadap kinerja sel surya struktur TCO/(p)a-Si:H/(i)a-Si:H/(n)a-Si:H/Ag. Variasi Ntr diberikan sesuai dengan hasil eksperimen antara 5.0 x 10 17 -5.0 x10 19 cm -3 /eV yang dioperasikan pada ketebalan lapisan-p berbeda disertai dengan analisis diagram pita energi, kurva karakteristik J-V, profil medan listrik, dan konsentrasi pembawa muatan. Hasil simulasi menunjukkan bahwa sel surya bekerja secara optimum jika nilai parameter Ntr mampu dikontrol untuk nilai <5.0 x 10 18 cm -3 /eV, dimana pada kondisi ini efisiensi yang bisa dicapai sekitar 7.68% (VOC = 947.2 mV, JSC = 10.84 mA/cm 2 ; FF = 74.82%) pada ketebalan lapisan-p sekitar 10 nm.

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Determining the Deposition Rate of Semiconducting Intrinsic Layer Prepared by Nanospray Method

Firdaus,

Purwandari,

Asih

et al. 2023

J. Fis. dan Apl.

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Amorphous carbon (a-C) film provides potential ability as an i-type layer in semiconductor material for photovoltaic purposes due to its tunable properties. Here, we investigate how to get the deposition rate estimation of the thickness and homogenous surface of a-C film as an i-type in solar cell applications. The a-C was prepared from palmyra liquid sugar using nebulizer as a nanospray method. The thick palmyra liquid sugar was carbonized at 250 • C for 2.5 hours then continued at 300 • C for 2 hours to obtain high-carbon charcoal. The thickness was examined using a SEM cross section, and the amorphous phase was measured using XRD. The amorphous characteristic of a-C is confirmed by broad peaks in XRD patterns. The thickness of a-C films was found to be thinner than in a previous study that used a similar materials and methods but different equipment in the deposition process. The average thickness of a-C films is in the range of 200 to 450 nm, followed by an increase in the deposition time of 5 to 25 s. By these value, the deposition rate estimation was obtained using extrapolation linier method from the SEM result around 11.62 nm/s. This result can be used as a reference to make various thicknesses for the i-layer in order to find the maximum thickness that gives high efficiency to amorphous carbon film.

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Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study

Cited by 5 publications

References 38 publications

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

Analysis of ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/Al HIT (Heterostructure with Intrinsic Thin Layer) solar cell performances.

Pengaruh Rapat Cacat Dangling-Bond Lapisan (p)a-Si:H Pada Kinerja Sel Surya Struktur p-i-n

Determining the Deposition Rate of Semiconducting Intrinsic Layer Prepared by Nanospray Method

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