Perimeter Effects on Heavy Doping GaAs Diodes

Abstract

The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally The results indicate that the diodes with high energy states density will be more easily shorted than that with low energy states density during alloying. The possibility of shunt short of GaAs diode increases with the decrease of the distance between the front contact and pn junction. The AlGaAs layers enhance the dark current.