“…The benefit of Mexican hat in thermoelectricity is explained in terms of abrupt changes in the DOS, resembling a singularity near the band edges, which promotes carrier transport. − We elaborate on the transport properties of GaGeTe from a Landauer perspective . From this vantage point, the Onsager coefficients, which regulate the transport distribution function, are defined as Σ( E ) ∝ M ( E )λ( E ), where M is the density of modes and λ is the mean-free-path of back-scattering electrons. , As previously noted, the “Mexican hat” causes a singularity (i.e., a sudden rise) in the vicinity of the VBM (Figure ). According to Landauer’s formulation, such singularity increases the number of conducting channels, facilitates carrier transportation, and enhances the PF of a thermoelectric material. , …”