Periodically arranged Si nanostructures by glancing angle deposition on patterned substrates

Abstract

Using glancing angle deposition (GLAD) by ion beam sputtering of Si on differently patterned substrates, periodically arranged Si nanostructures were obtained. Patterns with tetragonal, honeycomb-like, and hexagonally closed packed (hcp) arrangement of the artificial seeds for the subsequent deposition at oblique particle incidence were used to demostrate the influence of the pattern periodicity, the inter-seed distances, and other deposition parameters on the growth and morphological evolution of the Si nanostructures.Cross-sectional scanning electron microscopy micrograph of periodically arranged Si nanospirals deposited on a tetragonally arranged template pattern.

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

“…Expanding on this simple approach, the use of substrates with a well-defined lithographic pattern opens up a range of new and unexpected possibilities for the nano-structuring of OAD thin films. To this end, patterned substrates consisting of well-ordered nano-structured array patterns or seed layers have been prepared through a variety of lithographic methods, laser writing, embossing or other top-down fabrication methods [24,87,[98][99][100][101][102][103][104][105][106][107][108][109]. Among these, the use of colloidal lithography (i.e., OAD on a substrate pre-coated with packed nanospheres of different materials) has gained much popularity over the last few years thanks largely to its simplicity [110][111][112][113].…”

Non‐periodic nanoscale templates by diffraction mask projection laser ablation

“…The PVD technique GLAD (see e.g ., Refs. 9, 11, 13–15) is applied to templates generated with the masks shown in Fig. 1a and d to grow silicon nanocolumns (Fig.…”

“…For some applications, however, a lateral periodic ordering of the structures and precise control of structure diameters will be needed. This requires a patterning of the substrate prior to GLAD by nanosphere, photo, or EBL and results in periodically arranged nanostructures 10, 11. Applications of non‐periodic templates for STF growth has been demonstrated by Martin‐Palma et al 12.…”

Optimized growth of Ge nanorod arrays on Si patterns

“…The mass flow of f O2 ¼ 160 sccm was kept constant for t O2 ¼ 10 and 14 min (for D ¼ 535 nm) and t O2 ¼ 14 and 35 min (for D ¼ 722 nm) to achieve isolated PS nanospheres of diameters D plasma ¼ 200 and 100 nm, respectively, as schematically sketched in Fig. After the patterning procedure, ion beam sputter GLAD of Ge was carried out in a high vacuum deposition chamber with a base pressure 1.0 Â 10 À8 mbar as described elsewhere [8][9][10]21,[26][27][28] . Subsequently, in order to produce cylindrical Si seeds on these substrates, inductively coupled plasma reactive ion etching was performed 24,25 (ICP-RIE: Plasmalab 100 Oxford Instruments Plasma Technology) with an ICP source (2 MHz, 1200 W) and an RIE source (13.56 MHz, 45 W).…”

“…The growth of single isolated nanorod was achieved 34 on each seed by merely reducing the seed width to w s ¼ 150 nm and subsequently altering the interseed distance. 8 The growth on the entire sidewalls of the Si seeds and interseed condensation f ¼ 63 6 8 nm can be attributed to the broad angular distribution of the particle flux due to the sputtering method. 8 However, in the current experiment, Si seeds, arranged in a planar-closed-packed array, experience highly symmetric shadowing from the six nearest neighbors that are located at a distance R s .…”