Permittivity and Conductivity of Low-Dielectric-Constant SiOC:H Films Deposited by Plasma-Enhanced Chemical Vapor Deposition

Gonon, P.; Sylvestre, Alain; Meynen, H.; Cotthem, L. Van

doi:10.1149/1.1545467

Cited by 27 publications

(28 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has been reported that lowering the discharge power density decreases the dielectric constant of SiO͑C,H͒ films. 13,14 An increase in the process pressure produces the same effect as seen from our results. This similarity is understandable, as lower discharge power density or higher pressure ͑leading to reduced mean free path of the species͒ both lower the degree of dissociation of the radicals 15,16 and result in an increased incorporation of Si-͑CH 3 ͒ m group in the films.…”

Section: Resultssupporting

confidence: 89%

Effects of Deposition Pressure on Properties of Carbon-Doped Silicon Oxide Low Dielectric Constant Films

Rusli

Wang

Wong

et al. 2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

Carbon-doped silicon oxide ͓SiO͑C,H͔͒ dielectric films have been prepared by the plasma-enhanced chemical vapor deposition technique from trimethylsilane in an oxygen ͑O 2 ͒ environment. The process pressure was varied from 1.5 to 8.0 Torr and its effects on the properties of these films have been investigated. The films were also annealed at different temperatures from 400 to 700°C to determine their thermal stability. The thickness, refractive index, dielectric constants, infrared absorption, and surface morphology of the as-deposited and annealed samples were characterized. The dielectric constants of the as-deposited films were found to decrease initially with increasing process pressure and nearly saturate at pressures beyond 4.0 Torr. Dielectric constant as low as 2.86 has been obtained from the as-deposited film at 8.0 Torr process pressure. Lower refractive indexes were also obtained for films deposited at higher pressure. There are no significant changes to the properties of the films upon annealing at temperatures up to 500°C, which is beyond the current highest processing temperature for back end of the line structure of around 450°C. However, beyond that annealing resulted in a sharp increase in the dielectric constants of the films, attributed to the decomposition of CH x and SiCH x bonds.Ultralarge-scale integrated ͑ULSI͒ circuits require the replacement of the SiO 2 interlayer dielectric with low dielectric constants ͑low-k͒ materials to reduce propagation delays, cross-talk noise, and power dissipation arising from resistance-capacitance ͑RC͒ coupling. 1 Low-k materials prepared by the plasma-enhanced chemical vapor deposition ͑PECVD͒ technique are more evolutionary from the current ULSI technology relative to other approaches. Among the PECVD low-k materials, carbon-doped oxide dielectrics ͓SiO͑C,H͔͒ prepared from organosilicon precursor trimethysilane ͑C 3 H 10 Si, also referred to as 3MS͒ is one of the most favorable candidates due to their low-k ͑Ͻ3.0͒ and their key electrical and integration characteristics being similar to those of SiO 2 . 2 The dielectric constant of the PECVD prepared SiO͑C,H͒ films are dependent on the deposition conditions such as temperature, process pressure, radio frequency ͑rf͒ power, and gas flow rate. In our previous work, we have studied SiO͑C,H͒ films deposited with different O 2 /3MS flow ratios at a constant process pressure of 4.0 Torr. 3 The lowest dielectric constant of 2.9 was obtained for the film deposited at a O 2 /3MS flow ratio of 100/600 sccm. In this study, we aim to investigate the effects of process pressure on the characteristics of SiO͑C,H͒ films so as to further optimize the process conditions and lower the dielectric constant. A series of films deposited using the above optimized flow ratio, with the process pressure varied over a wide range from 1.5 to 8.0 Torr, were characterized. Currently, the highest processing temperature for the back end of the line ͑BEOL͒ structure is around 400-450°C, and it is important that any potential low-k dielec...

show abstract

Section: Resultssupporting

confidence: 89%

Effects of Deposition Pressure on Properties of Carbon-Doped Silicon Oxide Low Dielectric Constant Films

Rusli

Wang

Wong

et al. 2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Overall, fluorinated silica glasses have shown κ values around 3.6 . Substitution of silica SiO bonds with SiC bonds, yielding silicon oxycarbides (SiOC:H), has resulted in a significant lowering of κ (e.g., down to 2.8 at 10 6 Hz for PECVD‐deposited SiOC:H thin films). Fluorinated organic materials have been tested as well: CF bonds have lower polarizability (0.56 Å 3 ) and higher energy (485 kJ mol −1 ) than CH bonds (0.65 Å 3 and 414 kJ mol −1 , respectively) .…”

Section: Introductionmentioning

confidence: 99%

Fluorous Metal–Organic Frameworks and Nonporous Coordination Polymers as Low‐κ Dielectrics

Galli

Cimino

Ivy

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

A fluorous metal-organic framework [Cu(FBTB)(DMF)] (FMOF-3) [H 2 FBTB = 1,4-bis(1-H-tetrazol-5-yl)tetrafluorobenzene] and fluorous nonporous coordination polymer [Ag 2 (FBTB)] (FN-PCP-1) are synthesized and characterized as for their structural, thermal, and textural properties. Together with the corresponding nonfluorinated analogues lc-[Cu(BTB) (DMF)] and [Ag 2 (BTB)], and two known (super)hydrophobic MOFs, FMOF-1 and ZIF-8, they have been investigated as low-dielectric constant (low-κ) materials under dry and humid conditions. The results show that substitution of hydrogen with fluorine or fluoroalkyl groups on the organic linker imparts higher hydrophobicity and lower polarizability to the overall material. Pellets of FMOF-1, FMOF-3, and FN-PCP-1 exhibit κ values of 1.63(1), 2.44(3), and 2.57(3) at 2 × 10 6 Hz, respectively, under ambient conditions, versus 2.94(8) and 3.79(1) for lc-[Cu(BTB)(DMF)] and [Ag 2 (BTB)], respectively. Such low-κ values persist even upon exposure to almost saturated humidity levels. Correcting for the experimental pellet density, the intrinsic κ for FMOF-1 reaches the remarkably low value of 1.28, the lowest value known to date for a hydrophobic material.

show abstract

“…These data show that the SiO 2 (CH 3 ) 2 , existing in the D5 molecule, are conserved in the film. For the DEMS hybrid, Si-CH 3 position is 1271 cm -1 , which can be correlated to a Si-(CH 3 show a more oxidized structure around Si in DEMS hybrid. There are also differences in term of Si-H bond: in D5 hybrid, there is no Si-H bond whereas in DEMS hybrid FTIR spectrum shows Si-H at 2234 cm -1 and 2173 cm -1 and also a contribution at 887 cm -1 which indicates that Si-H is in SiH 2 structure.…”

Section: Matrix Comparisonmentioning

confidence: 78%

“…To maintain interconnects performances, major changes are required at each generation: copper metallization was first introduced to reduce line resistance [1], then dielectrics materials with low dielectric constant (κ) were developed to reduce the parasitic capacitance [2]. The low κ material currently used in industry is an amorphous a-SiOC:H deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) [3]. This a-SiOC:H is a silicon-oxygen backbone containing methyl groups which induce free volume, to decrease the dielectric constant to values around 3.0.…”

Section: Introductionmentioning

confidence: 99%

Ultra low κ PECVD Porogen Approach: Matrix Precursors Comparison and Porogen Removal Treatment Study

et al. 2005

View full text Add to dashboard Cite

The introduction of new dielectrics into silicon chip interconnection technology is necessary to increase electrical performance. Sub-65nm technologies need κ values below 2.5 and the main way to reduce the dielectric constant is to introduce porosity. This work reports results concerning a two steps PECVD porogen approach to perform Ultra Low κ (κ <2.5). The first step is an hybrid material deposition: i.e. an a-SiOC:H matrix containing organic sacrificial inclusions (porogen phase). In the second step, the porogen is removed by a suitable curing to generate porosity. Two siloxane precursors (decamethylcyclopentasiloxane and diethoxymethylsilane) were evaluated as matrix precursors. Their influences, as well as O 2 addition in plasma gas feed, in terms of cross-linking and incorporation were evaluated by FTIR analysis. Thermal anneal and UV treatment (thermally assisted) were evaluated as a curing second step. It allows to better understand this critical step which combines porogen removal and material cross-linking. By optimizing deposition and curing parameters, κ value lower than 2.4 were obtained.

show abstract

Permittivity and Conductivity of Low-Dielectric-Constant SiOC:H Films Deposited by Plasma-Enhanced Chemical Vapor Deposition

Cited by 27 publications

References 21 publications

Effects of Deposition Pressure on Properties of Carbon-Doped Silicon Oxide Low Dielectric Constant Films

Effects of Deposition Pressure on Properties of Carbon-Doped Silicon Oxide Low Dielectric Constant Films

Fluorous Metal–Organic Frameworks and Nonporous Coordination Polymers as Low‐κ Dielectrics

Ultra low κ PECVD Porogen Approach: Matrix Precursors Comparison and Porogen Removal Treatment Study

Contact Info

Product

Resources

About