Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization

Cunha, José M. V.; Barreiros, Maria Alexandra; Curado, António; Lopes, Tomás S.; Oliveira, Kevin; Oliveira, António J. N.; Barbosa, João R. S.; Vilanova, António; Brites, Maria João; Mascarenhas, João; Flandre, Denis; Silva, Ana G.; Fernandes, Paulo A.; Salomé, Pedro M. P.

doi:10.1002/admi.202101004

Cited by 3 publications

(1 citation statement)

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“…In addition, this approach is transversal for several solar cell technologies, in which the use of passivation and light-trapping approaches has been explored. [16,37,[97][98][99][100][101]…”

Section: Optoelectronic Performancementioning

confidence: 99%

Development of a Plasmonic Light Management Architecture Integrated within an Interface Passivation Scheme for Ultrathin Solar Cells

Oliveira,

Teixeira,

Relvas

et al. 2024

Solar RRL

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In response to climate and resource challenges, the transition to a renewable and decentralized energy system is imperative. Ultrathin Cu(In,Ga)Se2 (CIGS)‐based solar cells are compatible with such transition due to their low material usage and improved production throughput. Despite the benchmark efficiency of CIGS technology, ultrathin configurations face efficiency drops arising from increased rear interface recombination and incomplete light absorption. Dielectric passivation schemes address rear interface recombination, but achieving simultaneous electrical and optical gains is crucial for thinning down the absorber. Plasmonic nanoparticles emerge as a solution, enhancing light interaction through resonant scattering. In the proposed architecture, the nanoparticles are encapsulated within a dielectric rear passivation layer, combining effective passivation and light trapping. A controlled deposition and encapsulation of individualized nanoparticles is achieved by an optimized process flow using microfluidic devices and nanoimprint lithography. With the developed plasmonic and passivated architecture, a 3.7 mA cm−2 short‐circuit current density and a 23 mV open‐circuit voltage improvements are obtained, leading to an almost 2% increase in light‐to‐power conversion efficiency compared to a reference device. This work showcases the developed architecture potential to tackle the electrical and optical downfalls arising from the absorber thickness reduction, contributing to the dissemination of ultrathin technology.

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Section: Optoelectronic Performancementioning

confidence: 99%

Development of a Plasmonic Light Management Architecture Integrated within an Interface Passivation Scheme for Ultrathin Solar Cells

Oliveira,

Teixeira,

Relvas

et al. 2024

Solar RRL

Self Cite

View full text Add to dashboard Cite

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Fixed charge passivation in perovskite solar cells

2023

Nat Energy

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Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor

Parion,

Scaffidi,

Duerinckx

et al. 2024

Applied Physics Letters

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Lithium fluoride (LiF) is currently a very popular dielectric material used as a passivation or transport layer in a variety of applications, especially in high-efficiency solar cells. Despite this, its conduction properties and interface behavior with silicon remain largely unexplored. In this work, a LiF metal–insulator–semiconductor (MIS) structure is fabricated and characterized, and its properties are compared to the well-understood aluminum oxide (Al2O3) MIS structure. First, a higher current density in LiF compared to Al2O3 is highlighted, as well as its PN junction-like behavior with n-type silicon (n-Si), being rather unconventional for a dielectric layer. C–V measurements showcase the likely presence of an interface defect, causing an increase in the apparent doping and a shift in the flatband voltage VFB by +70 meV. This defect is found to be of the acceptor type, which renders the interface fixed charge more negative and improves the field-effect passivation in the case of a negative Qf. Finally, a density of interface states Dit≈2×1011 cm−2 eV−1 was found for LiF/n-Si, which is a low value showing appropriate chemical passivation at the interface. Overall, this work enables us to shed more light on the interface properties of LiF on n-Si, which is an essential step toward its wider use in state-of-the-art solar cells and other silicon-based devices.

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Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization

Abstract: Figure 1. Typical n-i-p (regular) planar PSC. Not at scale.

Cited by 3 publications

References 84 publications

Development of a Plasmonic Light Management Architecture Integrated within an Interface Passivation Scheme for Ultrathin Solar Cells

Development of a Plasmonic Light Management Architecture Integrated within an Interface Passivation Scheme for Ultrathin Solar Cells

Fixed charge passivation in perovskite solar cells

Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor

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