Due to its excellent physical and chemical properties, the halide all-inorganic CsPbX 3 (X = Cl, Br, I) perovskite semiconductors are intensively studied and the applications are penetrating many fields such as solar cells, [1][2][3][4][5][6] light emitting diodes, [7][8][9][10] lasers, [11][12][13] chemical sensors, [14][15][16] catalysis, [17][18][19] photo/X-ray/γ-ray detectors, [20][21][22][23][24][25][26][27] transistors, [28][29][30] and computing. [31,32] Driven by this trend, various types of perovskite based heterojunctions, for example, perovskite-metal, perovskite-semiconductor, or perovskite-insulator heterojunctions have been developed and All-Inorganic perovskite CsPbX 3 (X = Cl, Br, I) quantum dots (QDs) have attracted tremendous attention in the past few years for their appealing performance in optoelectronic applications. Major properties of CsPbX 3 QDs include the positive photoconductivity (PPC) and the defect tolerance of the in-band trap states. Here it is reported that when hybridizing CsPbX 3 QDs with indium tin oxide (ITO) nanocrystals to form CsPbX 3 -ITO nano-heterojunctions (NHJs), a voltage tuned photoresponse-from PPC to negative photoconductivity (NPC) transform-is achieved in lateral drain-source structured ITO/CsPbX 3 -ITO-NHJs/ITO devices. A model combining exciton, charge separation, transport, and most critical the voltage driven electron filling of the in-band trap states with drain-source voltage (V DS ) above a threshold, is proposed to understand this unusual PPC-NPC transform mechanism, which is different from that of any known nanomaterial system. This finding exhibits potentials for developing devices such as photodetectors, optoelectronic switches, and memories.