“…In recent years, gallium oxide (Ga 2 O 3 ) became one of the most important materials that can operate in harsh conditions. With a band-gap of 4.8 eV, a high melting point of 1900 °C, excellent electrical conductivity, high figure of merit for high-frequency applications, and photoluminescence [4,5], it is an ideal candidate for visible-blind UV-light sensors, particularly for power electronics, solar-blind UV detectors, and devices for harsh environments [6,7]. New processes have been investigated to synthesize Ga 2 O 3 nanowires (NWs) through a bottom-up approach, which include thermal oxidation [8,9], vapor-liquid-solid mechanism [10], pulsed laser deposition [11], sputtering [12], thermal evaporation [13,14,15], molecular beam epitaxy [16], laser ablation [17], arc-discharge [18], carbothermal reduction [19], microwave plasma [20], metalorganic chemical vapor deposition [21], and the hydrothermal method [22,23].…”