Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun Chieh; Tseng, Tseung‐Yuen

doi:10.1088/1361-6528/aa80b4

Cited by 36 publications

(24 citation statements)

References 44 publications

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“…Figure a shows the memory retention of both the HRS and the LRS at V read = 1 V in time under ambient conditions. Clearly, no considerable degradation was observed for 10 4 s in the range measured in other works . Figure b shows the current variations measured at 1 V after each cycle of the writing and erasing processes for 600 cycles in the voltage scan from 0 to 9 V and 9 to 15 V. The observed small fluctuations of the current in the two memory states (the HRS and the LHS) are within the range of the inherent offset between two successive measurements.…”

mentioning

confidence: 49%

Organic Flexible Memristor with Reduced Operating Voltage and High Stability by Interfacial Control of Conductive Filament Growth

Lee

Park

Keum

et al. 2019

Physica Rapid Research Ltrs

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Herein, the underlying mechanisms for the growth of conductive filaments (CFs) at a metal–polymer electrolyte interface through ion migration in organic electrochemical metallization (ECM) memristor are presented. It is observed that the free volume of voids (nanopores) in the polymer electrolyte serves as the pathways of metal‐cations whereas the interfacial topography between an active electrode and a polymer electrolyte determines the nucleation sites of the CFs. The growth kinetics of the CFs and the resultant resistive memory are found to vary with the molecular weight of the polymer electrolyte and the metal protrusions at the interface. Our direct observations show that the free volume of voids of the polymer electrolyte, varied with the molecular weight, dictates the ion transport for the growth and the disruption of the CFs. Our organic ECM‐based memristor with a hetero‐electrolyte exhibits high mechanical flexibility, low switching voltages reduced by about three times compared to those of conventional devices, and stable memory retention for longer than 104 s under repeated cycles of bending.

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mentioning

confidence: 49%

Organic Flexible Memristor with Reduced Operating Voltage and High Stability by Interfacial Control of Conductive Filament Growth

Lee

Park

Keum

et al. 2019

Physica Rapid Research Ltrs

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“…As a candidate for next-generation memory storage, resistive random access memory (RRAM) has attracted more and more researchers' attention because it has the potential to achieve the excellent storage properties mentioned above [11][12][13]. Metal oxides of various properties have been used to study RRAM as materials because of full compatibility with the standard complementary metal oxide semiconductor (CMOS) process [14], such as TaO x [15][16][17], Zr [18][19][20], ZnO 2 [21][22][23], TiO 2 [24][25][26], and HfO 2-x [27,28]. In these materials, as an excellent storage medium, HfO 2-x has been the research focus.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Guo

Zeng

2019

Journal of Nanomaterials

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Switching between high resistance states and low resistance states in a resistive random access memory device mainly depends on the formation and fracture of conductive filaments. However, the randomness of the conductive filament growth and the potential breakdown of the large voltage in the forming process will lead to unstable resistive switching and memory performance. We studied the possible natural forming process of conductive filaments for intrinsic defects under the influence of top electrode material based on the structure of W/HfO2-x/Pt. Such a simple device shows long retention time and great endurance cycles. The dendritic oxygen vacancy (VO) conductive filament model was constructed, and the dynamic VO migration under directional external bias was described according to the characteristic electrical performance. In addition, we also explored the relationship between the multilevel resistance and the evolution of a dendritic VO conductive filament, signifying the potential application of multilevel storage in the future. Furthermore, a Ag/HfO2-x/Ag selector was fabricated to assemble the memory device in wire connection which exhibits the potential of eliminating leaky current in the memory array. The connection also indicates that the fabrication process of the 1S1R structure can be simplified by using the same functional layer.

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“…Flexible electronics are more portable and deformable in comparison with silicon-based devices [ 10 , 11 , 12 ]. However, most RRAM-based synaptic memories are composed of various inorganic materials, such as HfO x , Al 2 O 3 , and ZnO [ 13 , 14 , 15 ]. These inorganic materials usually require high temperature treatment steps with poor stretchability.…”

Section: Introductionmentioning

confidence: 99%

An Organic Flexible Artificial Bio-Synapses with Long-Term Plasticity for Neuromorphic Computing

Wang

Chen

et al. 2018

Micromachines

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Artificial synapses, with synaptic plasticity, are the key components of constructing the neuromorphic computing system and mimicking the bio-synaptic function. Traditional synaptic devices are based on silicon and inorganic materials, while organic electronics can open up new opportunities for flexible devices. Here, a flexible artificial synaptic device with an organic functional layer was proposed. The organic device showed good switching behaviors such as ON/OFF ratio over 100 at low operation voltages. The set and reset voltages were lower than 0.5 V and −0.25 V, respectively. The long-term plasticity, spike-timing-dependent plasticity learning rules (STDP), and forgetting function were emulated using the device. The retention times of the excitatory and inhibitory post-synaptic currents were both longer than 60 s. The long-term plasticity was repeatable without noticeable degradation after the application of five voltage pulse cycles to the top electrode. These results indicate that our organic flexible device has the potential to be applied in bio-inspired neuromorphic systems.

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Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

Cited by 36 publications

References 44 publications

Organic Flexible Memristor with Reduced Operating Voltage and High Stability by Interfacial Control of Conductive Filament Growth

Organic Flexible Memristor with Reduced Operating Voltage and High Stability by Interfacial Control of Conductive Filament Growth

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

An Organic Flexible Artificial Bio-Synapses with Long-Term Plasticity for Neuromorphic Computing

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