Perpendicular Anisotropy and Gilbert Damping in Sputtered Co/Pd Multilayers

Kato, Takeshi; Matsumoto, Y.; Kashima, Sae; Okamoto, Satoshi; Kikuchi, Nobuaki; Iwata, S.; Kitakami, Osamu; Tsunashima, S.

doi:10.1109/tmag.2012.2198446

Cited by 42 publications

(33 citation statements)

References 23 publications

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“…Here, one should also note [70] that the values of the damping constant reported for Co/Pd multilayers in Ref. [23] are more accurate than the results found by the same authors in their earlier work [22] where higher values of α are observed due to a lower magnitude of the external magnetic field H ext applied in the TRMOKE experiments which led to a higher magnetic inhomogeneity. Even lower values of , much smaller than 0.002 eV are required to get an agreement between the calculated α and the results of a recent experiment on [Co(t Co nm)/Pd(0.9 nm)] 8 multilayers [44], which may be related to the fact that the TRMOKE measurements were conducted for H ext lower than in Ref.…”

Section: -5supporting

confidence: 56%

“…[44]. The Gilbert damping has also been measured for Co/Pd, Co/Pt, and Co/Ni multilayers by the time-resolved magneto-optical Kerr effect (TRMOKE) technique [22,23,48] and it has been found to grow linearly with increasing ratio t NM /t Co for Co/NM multilayers with various Co and NM (Pd, Pt) layer thicknesses, t Co and t NM , respectively.…”

Section: Introductionmentioning

confidence: 98%

“…Measurements of the damping constant α in [FM/NM] N binary superlattices have been reported by different experimental groups [22,23,[25][26][27][42][43][44][45][46][47][48][49][50][51][52]. The presence of NM layers in magnetic binary superlattices results in larger magnetic damping in comparison with the corresponding bulk ferromagnetic metals.…”

Section: Introductionmentioning

confidence: 99%

“…Such multilayers can exhibit oscillatory interlayer exchange coupling [5][6][7][10][11][12] and giant magnetorestistance [5,10,13,14] as well as large perpendicular magnetic anisotropy (PMA) due to the magnetocrystalline anisotropy terms arising from the multiple FM/NM interfaces. In particular, large PMA is found in Fe/Pt, Co/Pd, and Co/Pt multilayers [15][16][17][18][19][20][21][22][23], including L1 0 superlattices [24][25][26][27]. Magnetic multilayers with out-of-plane magnetization are essential ingredients in spintronic applications, in particular, they turn out to be suitable in spin-transfer torque devices like magnetic random access memory (MRAM) [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

“…In particular, this concerns the dependence on the thickness ratio t NM /t Co investigated experimentally in Refs. [22,23,48].…”

Section: Introductionmentioning

confidence: 99%

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Gilbert damping in binary magnetic multilayers

Barati

Cinal

2017

Phys. Rev. B

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We present quantum mechanical calculations of the Gilbert damping constant α in ultrathin L1 0 [Co/NM] N superlattices and (001) fcc [Co/NM] N magnetic multilayers built of cobalt and nonmagnetic metals NM = Cu, Ag, Pd, Pt, and Au. The calculations are performed within a realistic nine-orbital tight-binding model of the band structure including spin-orbit interaction. The dependence of α on the stacking number N , ferromagnetic and nonmagnetic layer thicknesses as well as the electron scattering rate is investigated. The damping constant is shown to be the sum of a constant term (bulklike) and a 1/N term (due to external surfaces) which arise from interand intraband electronic transitions, respectively. The calculated α is found to be enhanced in the considered multilayers in comparison with its values for bulk Co and their bilayer counterparts with the same total Co thickness. The origin of this enhancement and the variation of α with the geometric structure of the multilayers are further investigated by analyzing the damping contributions from individual atomic layers. The obtained theoretical results for the damping constant are shown to be in good agreement with previous experimental observations in magnetic multilayers. In particular, the experimentally observed linear dependence on the ratio of NM (Pd or Pt) and Co layer thicknesses is reproduced in the present calculations.

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Section: -5supporting

confidence: 56%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…In particular, this concerns the dependence on the thickness ratio t NM /t Co investigated experimentally in Refs. [22,23,48].…”

Section: Introductionmentioning

confidence: 99%

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Gilbert damping in binary magnetic multilayers

Barati

Cinal

2017

Phys. Rev. B

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Sputtered L1₀‐FePd and its Synthetic Antiferromagnet on Si/SiO₂ Wafers for Scalable Spintronics

Lyu

Shoup

Huang

et al. 2023

Adv Funct Materials

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As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L1 0 -FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L1 0 -FePd thin films on Si/SiO 2 wafers is still unmet. In this paper, high-quality L1 0 -FePd and its SAF on Si/SiO 2 wafers are prepared by coating the amorphous SiO 2 surface with an MgO(001) seed layer. The prepared L1 0 -FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L1 0 -FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L1 0 -FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.

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Recent Developments in Spin Transfer Torque MRAM

Sbiaa

Piramanayagam

2017

Physica Rapid Research Ltrs

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Spin transfer torque (STT) switching-based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non-volatile memory device in computing devices, smartphones, and so on. STT-MRAM devices with in-plane magnetization configuration have been marketed as niche products. Devices with out-ofplane magnetization are being considered for embedded memory as the first step. Aggressive goals include replacing dynamic random access memory (DRAM) with STT-MRAM. This review article introduces the basics of STT-MRAM and describes the recent progress in overcoming certain challenges such as reduction of power consumption and increase of storage density, which will make it a strong competitor for DRAM. Reduction of Spin Torque Switching CurrentThe main advantage of STT-MRAM compared to magnetic fieldbased MRAM is its scalability. For a given anisotropy energy K u , the

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Perpendicular Anisotropy and Gilbert Damping in Sputtered Co/Pd Multilayers

Cited by 42 publications

References 23 publications

Gilbert damping in binary magnetic multilayers

Gilbert damping in binary magnetic multilayers

Sputtered L1₀‐FePd and its Synthetic Antiferromagnet on Si/SiO₂ Wafers for Scalable Spintronics

Recent Developments in Spin Transfer Torque MRAM

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Perpendicular Anisotropy and Gilbert Damping in Sputtered Co/Pd Multilayers

Cited by 42 publications

References 23 publications

Gilbert damping in binary magnetic multilayers

Gilbert damping in binary magnetic multilayers

Sputtered L10‐FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics

Recent Developments in Spin Transfer Torque MRAM

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Sputtered L1₀‐FePd and its Synthetic Antiferromagnet on Si/SiO₂ Wafers for Scalable Spintronics