Perpendicular magnetic recording -Its development and realization-

Iwasaki, S.

doi:10.2183/pjab.85.37

Cited by 34 publications

(9 citation statements)

References 14 publications

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“…Recently emerging technologies such as 3D stackable architecture and MLC recording have significantly compensated the adverse influence of the selector device on the resulting cell scalability, leading to further improvements in device programming, device read, cell design, and coding and signal processing approaches that can ensure the reliable retrieval of stored data. In spite of this encouraging progress, its ultimate target for dominating the secondary storage memory market is yet to be realized due to the simultaneous performance improvements of the other rival memory devices like HDDs [ 202 ]. The current consensus is that the state-of-the-art PRAM technology can readily satisfy the standalone flash memory requirement, and is even suitable for storage class memory (SCM), while its application for secondary storage memory is still very challenging in the presence of more revolutionary storage schemes.…”

Section: Discussionmentioning

confidence: 99%

Application of phase-change materials in memory taxonomy

Wang

Wen

2017

Science and Technology of Advanced Materials

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Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.

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Section: Discussionmentioning

confidence: 99%

Application of phase-change materials in memory taxonomy

Wang

Wen

2017

Science and Technology of Advanced Materials

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“…Besides cell configuration, material progress also played an important role in the development of storage density. It is well-known that the storage density provided by materials with perpendicular magnetic anisotropy can be more than an order of magnitude higher than that provided by traditional in-plane magnetic anisotropy recording. , Moreover, some novel ferromagnetic materials have been proposed for memory applications, such as half metals, ferromagnetic semiconductors, ferromagnetic van der Waals crystals, , spin-gapless semiconductors , and so on.…”

Section: Magnetic Nmsmmentioning

confidence: 99%

Nonvolatile Multistates Memories for High-Density Data Storage

Cao

Lü

Wang

et al. 2020

ACS Appl. Mater. Interfaces

122

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In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.

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“…The current world is in the ''Age of Big Data'' that obviously proposes a stringent challenge for the recorded capacity of conventional mass storage devices such as magnetic disk, optical disc, and Flash memory, which are however subjected to some insurmountable physical limits [1]- [3]. Therefore, it is timely to explore more innovative mass storage devices to meet the current storage need from global consumers, accelerating the debut of electrical probe phasechange memory (EPPCM).…”

Section: Introductionmentioning

confidence: 99%

Electro-Optical Operation of Electrical Probe Phase-Change Memory With Ultra-High Electrically Conductive Capping Layer

et al. 2019

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An electrical probe phase-change memory using an ultra-high electrically conductive capping layer allows for a successful write of the amorphous bit without thermally damaging the device. Due to the severe current spreading effect, the recorded bit, however, cannot be sensed based on the conventional electrical means. We, therefore, developed a numerical optical model to calculate the device transmission resulting from a focused spot of a mobile scanning near-field optical microscopy. The feasibility of using this novel approach to distinguish bits from their background is also demonstrated. INDEX TERMS Phase-change materials, probe, capping, transmission.

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Perpendicular magnetic recording -Its development and realization-

Cited by 34 publications

References 14 publications

Application of phase-change materials in memory taxonomy

Application of phase-change materials in memory taxonomy

Nonvolatile Multistates Memories for High-Density Data Storage

Electro-Optical Operation of Electrical Probe Phase-Change Memory With Ultra-High Electrically Conductive Capping Layer

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