Perpendicular Magnetized Magnetic Random-Access Memory Cells Utilizing the Precessional Spin-Current Structure: Benefits for Modern Memory Applications

Wolf, Georg; Kardasz, B.; Vásquez, Jorge A. Cardona; Boone, T.D.; Bozdag, Deniz; Watts, Steve; Hernandez, Jacob; Manandhar, Pradeep; Chin, Yuan-Tung; Pinarbasi, Mustafa

doi:10.1109/lmag.2020.3001487

Cited by 7 publications

(2 citation statements)

References 18 publications

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“…Similar approaches have been considered in MTJ where two reference layers are used with one in-plane and the other perpendicularly magnetized [68]. The case of a perpendicularly magnetized free layer with two references layers, one out-ofplane magnetized, the other magnetized in plane has also been reported [69]. However, by using a SOT source the series resistance of a second tunnel barrier can be avoided.…”

Section: Spin Current Sources: Advantages and Disadvantagesmentioning

confidence: 95%

A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories

Safranski,

Sun,

Kent

2022

Preprint

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Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current can be used in 2-terminal and 3-terminal device geometries. In 2-terminal devices, charge-to-spin conversion occurs by spin filtering in the MTJ's ferromagnetic electrodes and present day MRAM devices operate near the theoretically expected maximum charge-to-spin conversion efficiency. In 3-terminal devices, spin-orbit interactions in a channel material can also be used to generate large spin currents. In this perspective article, we discuss charge-to-spin conversion processes that can satisfy the requirements of MRAM technology. We emphasize the need to develop channel materials with larger charge-to-spin conversion efficiency-that can equal or exceed that produced by spin filtering-and spin currents with a spin polarization component perpendicular to the channel interface. This would enable high-performance devices based on sub-20 nm diameter perpendicularly magnetized MTJ nanopillars without need of a symmetry breaking field. We also discuss MRAM characteristics essential for CMOS integration. Finally, we identify critical research needs for charge-to-spin conversion measurements and metrics that can be used to optimize device channel materials and interface properties prior to full MTJ nanopillar device fabrication and characterization.

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Section: Spin Current Sources: Advantages and Disadvantagesmentioning

confidence: 95%

A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories

Safranski,

Sun,

Kent

2022

Preprint

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“…The magnetization of the PSC layer oscillates and assists the initial motion during the magnetization switching of the recording layer. 84) The PSC layer is magnetically coupled with the recording layer through the non-magnetic layer, and its main role is to reduce the incubation time by inducing magnetic precession of the recording layer by the PSC layer at the initial stage of STT-switching. The precession of magnetization begins slowly in the L1 0 -FePd/Gr with high PMA, resulting in a long incubation time.…”

Section: Micromagnetic Simulation For X-nm Generationmentioning

confidence: 99%

Spintronics memory using magnetic tunnel junction for X nm-generation

Naganuma

2023

Jpn. J. Appl. Phys.

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The feasibility of X nm-generation scaling with magnetic tunnel junctions (MTJs) of spintronic memory is aimed at keeping up with state-of-the-art transistor scaling. Magnetocrystalline anisotropy, shape magnetic anisotropy, and multi-interfacial magnetic anisotropy have been proposed to overcome thermal fluctuation even at the X nm generation. The high magnetocrystalline anisotropy of the L10-ordered alloy combined with graphene as a tunneling barrier in the MTJs was the main focus in this study, and their potential for scaling for both 10-year data retention and nanosecond writing efficiency by micromagnetic simulation is investigated. Data retention of 10 years and high-speed writing of 2.2 ns are achieved in the MTJs with a junction diameter of 7 nm.

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Perspectives on spintronics technology development: Giant magnetoresistance to spin transfer torque magnetic random access memory

Pinarbasi¹,

Kent

2022

APL Materials

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The discovery of the giant magnetoresistance (GMR) effect in 1988 started a new field called spintronics and was recognized with the 2007 Nobel Prize in Physics, which was awarded to Fert and Grunberg. Spintronics is based on the contribution of both electron spin and electron charges of materials to facilitate electronic functions, enabling one extra degree of freedom for device operations. Spintronics has grown rapidly during the past three decades with significant discoveries, technological advancements, and material and device developments that have led to numerous product applications. Furthermore, new research fields and technology areas have been discovered and continue to expand. In this Perspective, key technological advances in the field during the past three decades will be highlighted, starting with the developments that led to the first use of the GMR effect in hard disk drives and its impact in the spintronic ecosystem to currently used perpendicular magnetic tunnel junctions (pMTJs) for spin transfer torque magnetic random access memory (STT-MRAM) devices. The important aspects of the pMTJ characteristics for the application of STT-MRAM will be discussed. This Perspective will present perspectives on a new structure that enhances the efficiency of the pMTJ-based STT-MRAM and research directions that can drive further advances in spintronics.

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Perpendicular Magnetized Magnetic Random-Access Memory Cells Utilizing the Precessional Spin-Current Structure: Benefits for Modern Memory Applications

Cited by 7 publications

References 18 publications

A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories

A Perspective on Electrical Generation of Spin Current for Magnetic Random Access Memories

Spintronics memory using magnetic tunnel junction for X nm-generation

Perspectives on spintronics technology development: Giant magnetoresistance to spin transfer torque magnetic random access memory

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