Persistent photoconductivity in InGaP/GaAs heterostructures

Fan, Jung-Chuan; Wang, J. C.; Chen, Y. F.

doi:10.1063/1.125207

Cited by 13 publications

(5 citation statements)

References 19 publications

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“…Figure 8c illustrates the microstructure of the coatings. The black-cycled regions display a typical maze-like pattern, which is expected from the amorphous structure [23]. This was further confirmed by the FFT pattern of the black-cycle region as presented in Fig.…”

Section: Composition and Bonding Statesupporting

confidence: 74%

Preparation and characterization of superhard AlB₂‐type WB₂ nanocomposite coatings

Jiang

Pei

Liu

et al. 2013

Physica Status Solidi (a)

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WB2 nanocomposite coatings were synthesized by dc magnetron sputtering. The morphology, chemical composition, chemical bonding state, microstructure, hardness, and tribological properties were investigated. The columnar‐structured coatings are dense and uniform. The as‐deposited coatings were found to have a metastable AlB2‐type structure as characterized by X‐ray diffraction and further confirmed by high‐resolution transmission electron microscopy. Coatings exhibit superhardness about 43.2 ± 5 GPa (taken from the plateau region) obtained by nanoindentation. In addition, the steady‐state friction coefficient µ = 0.23 and wear rate K = 6.5 × 10−6 mm3 N−1 m−1 were obtained under dry sliding condition in ambient environments. These characteristics indicate AlB2‐type WB2 coatings have high potential application as superhard and low wear coatings. Moreover, the AlB2‐type WB2 can hardly be prepared using the conventional powder metallurgy technology without high pressure, and this study proposes a new practical approach to prepare it.

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Section: Composition and Bonding Statesupporting

confidence: 74%

Preparation and characterization of superhard AlB₂‐type WB₂ nanocomposite coatings

Jiang

Pei

Liu

et al. 2013

Physica Status Solidi (a)

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“…Persistent photoconductivity (PPC) has been observed in NC2 and NC3 films. In fact, PPC is a common phenomenon of the heterostructures [38][39][40][41]. The PPC effect is caused by the spatial separation of photogenerated electrons and holes.…”

Section: Photosensitivitymentioning

confidence: 99%

The optoelectronic properties of titania–germanium nanocomposites

Chatterjee¹

2008

J. Phys. D: Appl. Phys.

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Titania–germanium (TiO2–Ge) is a novel nanocomposite material for photovoltaic applications. It is composed of Ge nanodots in a TiO2 matrix. In this study, it is shown that the structural, optical and electrical properties of TiO2–Ge could be tailored from these properties of Ge to TiO2. The wide variety of properties of TiO2–Ge establishes the promise of it being an active material for next generation solar cells.

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“…When the LED illuminates on the sample, the resistivity changes rapidly at the beginning and slowly at the end, while the residual photoconductance can persist for several hours after the light switch off. This phenomenon characterizes a typical effect [4] of persistent photoconductivity (PPC). The PPC level is about 90% of the initial PC value after more than 5000 seconds of decay.…”

Section: Resultsmentioning

confidence: 99%

Hopping photoconductivity and its long‐time relaxation in two‐dimensional array of Ge/Si quantum dots

Stepina

Yakimov

Nenashev

et al. 2005

phys. stat. sol. (c)

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Photoconductivity excitation kinetics has been studied in a two-dimensional array of Ge/Si quantum dots under illumination with different light wavelength. Both negative and positive photoeffects depending on dot occupations with holes were observed. Long-time conductivity dynamics (typically, 10 2 -10 4 sec at T=4.2 K) has been revealed as well as after switch on and switch off the illumination, displaying a sluggish temporal dependence. The observed effects were not suppressed by decreasing of the excitation energy below the silicon band-gap. For electronic glasses it was discovered that the more time under excitation the faster relaxation rate. Our results are explained by the different capture rate of electrons and holes by quantum dots, due to the presence of potential barriers created by positively charged Ge quantum dots.

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Persistent photoconductivity in InGaP/GaAs heterostructures

Abstract: Evidence of interface-induced persistent photoconductivity in InP ∕ In 0.53 Ga 0.47 As ∕ InP double heterostructures grown by molecular-beam epitaxy Appl. Phys. Lett.

Cited by 13 publications

References 19 publications

Preparation and characterization of superhard AlB₂‐type WB₂ nanocomposite coatings

Preparation and characterization of superhard AlB₂‐type WB₂ nanocomposite coatings

The optoelectronic properties of titania–germanium nanocomposites

Hopping photoconductivity and its long‐time relaxation in two‐dimensional array of Ge/Si quantum dots

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Persistent photoconductivity in InGaP/GaAs heterostructures

Abstract: Evidence of interface-induced persistent photoconductivity in InP ∕ In 0.53 Ga 0.47 As ∕ InP double heterostructures grown by molecular-beam epitaxy Appl. Phys. Lett.

Cited by 13 publications

References 19 publications

Preparation and characterization of superhard AlB2‐type WB2 nanocomposite coatings

Preparation and characterization of superhard AlB2‐type WB2 nanocomposite coatings

The optoelectronic properties of titania–germanium nanocomposites

Hopping photoconductivity and its long‐time relaxation in two‐dimensional array of Ge/Si quantum dots

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Product

Resources

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Preparation and characterization of superhard AlB₂‐type WB₂ nanocomposite coatings

Preparation and characterization of superhard AlB₂‐type WB₂ nanocomposite coatings