Persistent photocurrent spectroscopy of GaN metal–semiconductor–metal photodetectors on long time scale

Potı̀, B.; Passaseo, A.; Lomascolo, M.; Cingolani, R.; Vittorio, Massimo De

doi:10.1063/1.1840122

Cited by 29 publications

(15 citation statements)

References 20 publications

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“…Photocurrent gain has been widely observed in various MSM PDs, which is desirable for applications requiring high responsivity but could limit the detector bandwidth simultaneously [7]. At present, we could explain the internal gain mechanism by photogenerated hole trapped at surface states as well as image force lowering effect.…”

Section: Resultsmentioning

confidence: 95%

GaN MSM photodetectors fabricated on bulk GaN with low dark‐current and high UV/visible rejection ratio

Xie

Chen

et al. 2011

Phys. Status Solidi C

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GaN‐based metal‐semiconductor‐metal ultraviolet photodetectors (PDs) are fabricated on bulk GaN substrate. The dislocation density of the homoepitaxial layer characterized by cathodoluminescence mapping technique is ∼5×106 cm‐2. The PDs exhibit ultra‐low dark‐current of <5 pA at room temperature under 15 V bias, with an ultraviolet/visible rejection ratios up to 5 orders of magnitude. Even at a high temperature of 150 °C, the dark current of the device at 15 V bias is still <50 pA, with a reasonable ultraviolet/visible contrast of more than 5000, indicating that such kind of devices are suitable for high temperature operation. The responsivity of the PD increases as a function of applied bias, resulting in a quantum efficiency exceeding 100% at above medium bias. The photocurrent gain of the PD is attributed to photogenerated holes trapped at surface states as well as high‐field‐induced image‐force lowering effect. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 95%

GaN MSM photodetectors fabricated on bulk GaN with low dark‐current and high UV/visible rejection ratio

Xie

Chen

et al. 2011

Phys. Status Solidi C

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“…For GaN, in addition to carbon impurities, random potential fluctuations due to stoichiometry disorder, 23 nitrogen and gallium anti-sites and vacancies, and AX and DX centers are a few of the trap sources invoked. 26 Photodoping is also called persistent photoconductivity (PPC) in the literature because the light-induced free carrier concentration change lasts long after the illumination source is removed, 27 and the persistent nature of the photoconductivity is more dramatic at lower temperatures. 28 PPC was not observed in these samples where removing the light restored the original unilluminated M-S response.…”

Section: Resultsmentioning

confidence: 99%

III−V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN

2006

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Epilayers of single-crystal GaAsPN and GaPN semiconductor samples with varying nitrogen compositions were photoelectrochemically characterized to determine their potential to serve as water splitting photoelectrodes. The band gap and flatband potentials were determined and used to calculate the valence and conduction band edge energies. The band edges for all compositions appear to be too negative by more than 500 mV for any of the materials to effect light-driven water splitting without an external bias. Corrosion analysis was used to establish material stability under operating conditions. GaPN was found to show good stability toward photocorrosion; on the other hand, GaAsPN showed enhanced photocorrosion as compared to GaP.

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“…The decrease in photoresponsivity with temperature was also observed in earlier reports. 28,[31][32]41 Enhancement of responsivity is desirable for the performance of DUV detectors at high temperatures. The normalized spectral responsivity with varying temperature from RT to 250°C is depicted in Figure 3(a).…”

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confidence: 99%

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

Tak

Garg

Dewan

et al. 2019

Journal of Applied Physics

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High-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo current to dark current (PDCR) ratio of about 7100 was observed at room temperature (RT) while it had a value 2.3 at 250 °C at 10 V applied bias. A decline in photocurrent was observed from RT to 150 °C and then it increased with temperature up to 250 °C. The suppression of the blue band was also observed from 150 °C temperature which indicated that self-trapped holes in Ga2O3 became unstable. Temperature-dependent rise and decay times of carriers were analyzed to understand the photocurrent mechanism and persistence photocurrent at high temperatures. Coupled electron-phonon interaction with holes was found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.

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Persistent photocurrent spectroscopy of GaN metal–semiconductor–metal photodetectors on long time scale

Cited by 29 publications

References 20 publications

GaN MSM photodetectors fabricated on bulk GaN with low dark‐current and high UV/visible rejection ratio

GaN MSM photodetectors fabricated on bulk GaN with low dark‐current and high UV/visible rejection ratio

III−V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

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