2019
DOI: 10.1016/j.apsusc.2019.01.246
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Perspective on construction of heterojunction photocatalysts and the complete utilization of photogenerated charge carriers

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Cited by 115 publications
(44 citation statements)
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“…Therefore, the photogenerated electrons with high reduction ability in semiconductor-I and the photogenerated holes with high oxidation ability in semiconductor-B can be maintained [143]. In addition, the electrostatic attraction between the photogenerated electron on the CB of the semiconductor-II and the photogenerated holes on the VB of the semiconductor-I will promote the migration of the photogenerated electron from the semiconductor-II to the semiconductor-I, while in the type-II heterojunction, the electrostatic repulsion between the photogenerated electron of the semiconductor-I and the semiconductor-II will inhibit the transfer of electrons from semiconductor-I to the semiconductor-II [144,145]. So far, many photocatalytic composites that have the Z-scheme heterojunctions have been manufactured to degrade the pollutants.…”
Section: The Construction the Heterojunctionmentioning
confidence: 99%
“…Therefore, the photogenerated electrons with high reduction ability in semiconductor-I and the photogenerated holes with high oxidation ability in semiconductor-B can be maintained [143]. In addition, the electrostatic attraction between the photogenerated electron on the CB of the semiconductor-II and the photogenerated holes on the VB of the semiconductor-I will promote the migration of the photogenerated electron from the semiconductor-II to the semiconductor-I, while in the type-II heterojunction, the electrostatic repulsion between the photogenerated electron of the semiconductor-I and the semiconductor-II will inhibit the transfer of electrons from semiconductor-I to the semiconductor-II [144,145]. So far, many photocatalytic composites that have the Z-scheme heterojunctions have been manufactured to degrade the pollutants.…”
Section: The Construction the Heterojunctionmentioning
confidence: 99%
“…When n‐type semiconductor doped region and p‐type semiconductor doped region are in close contact, a p–n heterojunction region is formed at their space charge interface . When the photogenerated electrons and holes moved in the energy band of the p–n composite semiconductor photocatalysts, electron diffusion caused a spatial potential difference near the interface of the composite semiconductor, thus forming a self‐built electric field from the n‐type semiconductor to p‐type semiconductor direction .…”
Section: Photocatalysis Of Hydrotalcite‐derived Materials In Sewage Tmentioning
confidence: 99%
“…with other photocatalysts, which could be attributed to the high charge carrier recombination probability, so it is important to optimize the carrier dynamics [56,57]. One of the most effective methods is to construct the heterojunction with other traditional photocatalysts properly, which can not only further improve the solar light utilization efficiency, but also restrain the recombination rate of the photogenerated charge carrier [4,58,59]. Basically, two different heterojunctions were proved to be efficient for enhancing the photocatalytic activity: conventional type-II heterojunction and Z-scheme heterojunction, as illustrated in Fig.…”
Section: Tungsten-based Heterojunctionmentioning
confidence: 99%
“…Although the photogenerated charge carriers are separated efficiently under the driving of type-II heterojunction, the redox ability of electrons and holes is sacrificed due to the spontaneous transfer to low reduction and oxidation potentials for electrons and holes, respectively [61,63]. In contrast, Z-scheme heterojunction endows the tungsten-based composite with more positive VB and more negative CB potentials, which possess stronger oxidative holes and reductive electrons to carry out the enhanced photocatalytic performances [59,64,65].…”
Section: Tungsten-based Z-scheme Heterojunctionmentioning
confidence: 99%