Perspectives of UTBB FD SOI MOSFETs for Analog and RF Applications

A gm/ID Methodology Based Data-Driven Search Algorithm for the Design of Multistage Multipath Feed-Forward-Compensated Amplifiers Targeting High Speed Continuous-Time ΣΔ-Modulators

“…To explain these corrective measures, an example is taken. The circuit in Figure 3a depicts a single-stage common-source (CS) amplifier with a PMOS LVT input transistor and an NMOS RVT active load transistor and Figure 3b is its small-signal equivalent (SSE) circuit based on a general high frequency transistor model [25]. It should be noted that the following discussion on the frequency response of the single-ended CS amplifier can be safely adopted to explain similar issues in the differential amplifier since a half-circuit equivalent of a typical diff-pair is identical to the SSE circuit in Figure 3b.…”

UTBB Thermal Coupling Analysis in Technological Node Level

“…The output conductance constitutes an important analogue figure of merit [7], which influences on device performance for analog applications as it is directly correlated to the intrinsic gain of a transistor. It is well-known that it suffers an undesirable degradation in devices presenting SHE.…”

“…An evolution of the UTB SOI device constitutes in the Ultra-Thin Body and Buried Oxide (UTBB) transistor, which presents both silicon and buried oxide ultra-thin layers, where the BOX thickness (tbox) is in the order of 10-25 nm and tSi is similar to the one found in UTBs. Due to the reduced tbox, the substrate bias can be efficiently used as a second gate, also known as back gate, to improve the device performance for low power analog [6] and RF applications [7]. Additionally, the smaller BOX thickness has also promoted a better thermal behavior [8][9].…”

Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors

“…As an evolution of the UTB technology, a new arrangement of SOI device, the Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFET, presenting both silicon and buried oxide in ultrathin layers, was developed. In such device, the BOX thickness (tbox) is in the order of 10-25 nm [8] while the silicon layer one is kept in the order of 6-10 nm. The reduced tbox in UTBB transistors opens the possibility of the active substrate biasing, making it works as a second gate, also known as back gate, which can efficiently be used to improve the performance of the device when it operates in analog and RF applications [9].…”