Perturbed polariton spectra in optically damaged LiNbO<sub>3</sub>

Anikiev, A. A.; Reznik, L. G.; Umarov, B. S.; Scott, J. F.

doi:10.1080/07315178508200601

Cited by 19 publications

(13 citation statements)

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“…This was first established by Chen (1969), and later evaluated quantitatively by Anikiev et al (1985) who found an orthogonal electric field of % 40 kV=cm in the presence of moderately focused 0.5 W power at 514.5 nm from an argon laser. Most recently this result has been confirmed by Chaib, Otto, and Eng (2003).…”

Section: B Domains and Electro-optic Response Of Linbomentioning

confidence: 99%

“…As a result, large voltages and fields can arise perpendicular to the polar axis when illuminated. In a 1-W beam at 514.5 nm wavelength, focused to % 50 m diameter, lithium niobate exhibits a field of approximately 40 kV=cm in the xy plane, due to the 15 photovoltaic tensor component (Odulov, 1982, Anikiev et al, 1985Chaib, Otto, and Eng, 2003) (note that we used the reduced notation, the photovoltaic tensor is third rank).…”

Section: B Photovoltaic Tensor and Off-axis Polingmentioning

confidence: 99%

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Domain wall nanoelectronics

et al. 2012

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Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

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Section: B Domains and Electro-optic Response Of Linbomentioning

confidence: 99%

Section: B Photovoltaic Tensor and Off-axis Polingmentioning

confidence: 99%

Domain wall nanoelectronics

et al. 2012

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“…Notable ferroelectrics with this structure (but with d 0 cations) include LiNbO 3 (LNO) and BiFeO 3 (BFO). LNO is known for its large nonlinear optical response, and, often doped with iron, it was one of the first materials in which the bulk photovoltaic effect was observed and studied [2,51,52]. However, its bulk band gap is well outside the visible spectrum [53].…”

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First-Principles Materials Design of High-Performing Bulk Photovoltaics with theLiNbO3Structure

2015

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The bulk photovoltaic effect is a long-known but poorly understood phenomenon. Recently, however, the multiferroic bismuth ferrite has been observed to produce strong photovoltaic response to visible light, suggesting that the effect has been underexploited as well. Here we present three polar oxides in the LiNbO3 structure that we predict to have band gaps in the 1-2 eV range and very high bulk photovoltaic response: PbNiO3, Mg 1/2 Zn 1/2 PbO3, and LiBiO3. All three have band gaps determined by cations with d 10 s 0 electronic configurations, leading to conduction bands composed of cation s-orbitals and O p-orbitals. This both dramatically lowers the band gap and increases the bulk photovoltaic response by as much as an order of magnitude over previous materials, demonstrating the potential for high-performing bulk photovoltaics.Photovoltaic effects have long been observed in bulk polar materials, especially ferroelectrics [1][2][3][4]. Known as the bulk photovoltaic effect (BPVE), it appeared to derive from inversion symmetry breaking. Despite intense initial interest, early explorations revealed low energy conversion efficiency, in part due to the high band gaps of most known ferroelectrics. Additionally, despite several proposed mechanisms, the physical origin of the BPVE was unclear [2,[5][6][7][8].However, recent emphasis on alternative energy technologies and the observation of the effect in novel semiconducting ferroelectrics (with band-gaps in the visible range) has renewed interest [9][10][11][12][13][14]. Several studies have attempted to elucidate the various contributions to the photovoltaic response -bulk or otherwise -in ferroelectrics [15][16][17][18][19][20][21][22][23]. In particular, bismuth ferrite (BFO) has been found to generate significant bulk photocurrents; combined with its unusually low band gap of 2.7 eV, it has attracted a great deal of attention for its potential in photovoltaic applications [21,[23][24][25][26][27][28][29][30][31]. The understanding of the fundamental physics behind the effect has advanced as well; recently we demonstrated that the BPVE can be attributed to "shift currents", and that the bulk photocurrents may be calculated from first-principles. The ab initio calculation of the shift current and subsequent analysis yielded several chemical and structural criteria for optimizing the response. These criteria have been used previously to modify or identify existing materials with enhanced response [14,[32][33][34]. In this work, we use these insights to propose several candidate bulk photovoltaics with calculated response as much as an order of magnitude higher than well-known ferroelectrics, while having band gaps in or slightly below the visible spectrum. Our results demonstrate that bulk photovoltaic response can be much stronger than previously observed, supporting the possibility of materials suitable for application.There are two figures of merit for evaluating the BPVE in a material: the current density response to a spatially uniform electric field, and the G...

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“…19,20 By studying the vibrational spectra they showed that the component of the local electric field in the direction perpendicular to the direction of the spontaneous polarization is not negligible. The same result was theoretically proven by Yatsenko 21 when studying the anisotropy of the electronic polarizability of O 2Ϫ ions in stoichiometric LiNbO 3 .…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties ofLiNbO3single crystals at room temperature

2003

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The electrical and optical properties of lithium niobate (LiNbO 3 ) at room temperature are theoretically calculated by using a microscopic model based on the orbital approximation in correlation with the dipoledipole interaction. It is found that both the electronic polarizabilities and the electronic hyperpolarizabilities have to be considered in this calculation in order to match both the spontaneous polarization and refractive indices with experimental data.

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Perturbed polariton spectra in optically damaged LiNbO₃

Cited by 19 publications

References 9 publications

Domain wall nanoelectronics

Domain wall nanoelectronics

First-Principles Materials Design of High-Performing Bulk Photovoltaics with theLiNbO3Structure

Electrical and optical properties ofLiNbO3single crystals at room temperature

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Perturbed polariton spectra in optically damaged LiNbO3

Cited by 19 publications

References 9 publications

Domain wall nanoelectronics

Domain wall nanoelectronics

First-Principles Materials Design of High-Performing Bulk Photovoltaics with theLiNbO3Structure

Electrical and optical properties ofLiNbO3single crystals at room temperature

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Perturbed polariton spectra in optically damaged LiNbO₃