“…Common to all three of these techniques, ALD, ALD/MLD, and MLD, is that they can produce high-quality, pinhole-free, large-area homogeneous, and conformal thin films and coatings even on challenging substrates with atomic/molecular level precision but yet in an industry-feasible fashion. ,, These attractive attributes are derived from the self-terminating gas-surface reactions and the unique precursor feeding sequence in which the two (or more) different precursors are individually pulsed into the reactor chamber separated by an inert gas purge. Numerous ALD/MLD processes have been developed for, e.g., magnetic, − optical, − thermoelectric, , bioactive, , electrochemical, − and barrier/encapsulation − applications. Chemistry-wise, these materials cover most of the s-block and 3d transition metals, lanthanides, and some p-block and 4d and 5d transition metals, together with a variety of organic moieties from simple alkyls (e.g., ethylene glycol) to more complex aromatic molecules (e.g., azobenzene-4,4-dicarboxylic acid or 9,10-anthracenedicarboxylic acid), , and even natural organics (e.g., nucleobases or curcumin). , …”