pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures

Yang, Po‐Yu; Wang, Jyh-Liang; Chiu, Pao‐Hsiung; Chou, Jung-Chuan; Chen, Cheng-Wei; Li, Hung-Hsien; Cheng, Hsiu‐Fung

doi:10.1109/led.2011.2164230

Cited by 34 publications

(21 citation statements)

References 16 publications

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“…In the previous investigations [23,24], the AZO nanostructures with various Al dosages were synthesized successfully on AZO/glass substrate by hydrothermal growth method at 85 ∘ C. The morphologies, crystallinity, optical emission properties, bonding states, and chemical compositions of AZO nanostructures show evident dependence on the Al dosage [24]. While the Al dosage was equal or less than 3 at.%, only NWs are observed.…”

Section: Resultsmentioning

confidence: 99%

“…Al-doped ZnO (AZO) nanowires (NWs) and nanotubes (NTs) have been presented for the high conductance and high crystal quality [22], which could be expected for lower resistivity. However, only the finite report demonstrates the pH-sensing properties of AZO nanostructures [23]. The stability and durability of AZO nanostructured pH-EGFET sensors have not been addressed.…”

Section: Introductionmentioning

confidence: 99%

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pH‐Sensing Characteristics of Hydrothermal Al‐Doped ZnO Nanostructures

Wang

Yang

Hsieh

et al. 2013

Journal of Nanomaterials

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Highly sensitive and stable pH-sensing properties of an extended-gate field-effect transistor (EGFET) based on the aluminum-doped ZnO (AZO) nanostructures have been demonstrated. The AZO nanostructures with different Al concentrations were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C. The AZO sensing nanostructures were connected with the metal-oxide-semiconductor field-effect transistor (MOSFET). Afterwards, the current-voltage (I-V) characteristics and the sensing properties of the pH-EGFET sensors were obtained in different buffer solutions, respectively. As a result, the pH-sensing characteristics of AZO nanostructured pH-EGFET sensors with Al dosage of 3 at.% can exhibit the higher sensitivity of 57.95 mV/pH, the larger linearity of 0.9998, the smaller deviation of 0.023 in linearity, the lower drift rate of 1.27 mV/hour, and the lower threshold voltage of 1.32 V with a wider sensing range (pH 1 ~ pH 13). Hence, the outstanding stability and durability of AZO nanostructured ionic EGFET sensors are attractive for the electrochemical application of flexible and disposable biosensor.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

pH‐Sensing Characteristics of Hydrothermal Al‐Doped ZnO Nanostructures

Wang

Yang

Hsieh

et al. 2013

Journal of Nanomaterials

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“…Percorrendo os artigos publicados após o ano 2000, verifica-se que foram usados diferentes materiais para a construção de sensores e biossensores de pH tendo o EGFET como base. Por exemplo, a partir de 2004 destaca-se o interesse no uso de ZnO como sensor de pH tanto em ISFET como em EGFET inclusive em aplicações para a detecção de glicose [23][24][25][26][27][28][29][30][31][32][33].…”

Section: Introductionunclassified

Development of a technological tool for the electrical characterization of pH sensors based on EGFET platform

Silva¹,

Batista²

2016

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Resumo: A medida de pH encontra diversas aplicações na sociedade. O valor dessa grandeza em uma solução aquosa pode ser obtida facilmente utilizando um eletrodo de vidro. Porém, nasúltimas décadas observa-se o interesse pela pesquisa científica e o desenvolvimento tecnológico de sensores de pH a partir de transistores de efeito de campo principalmente devido ao seu potencial uso naárea de biosensores com aplicações, por exemplo, emáreas como a Medicina e a Biologia. Nesse caso, as medidas elétricas são fundamentais durante as diversas etapas de otimização desse sensor. Portanto, apresentamos neste trabalho detalhes de uma instrumentação científica desenvolvida para realizar diversas medidas de caracterização elétrica comumente utilizadas durante a fabricação e a pesquisa científica dos sensores de pH do tipo EGFET. Finalmente, destacamos que tanto o hardware como o software apresentados nesse trabalho serão disponibilizados apostando no paradigma open source hardware.Palavras-chave: EGFET, sensor de pH, instrumentação científica. Abstract:The pH measurement is present in many applications in society. The value of this chemical quantity in an aqueous solution can be obtained easily using a glass electrode. However, in recent decades there has been interest in scientific research and technological development of pH sensors from field-effect transistor mainly because of its potential use in biosensors area with applications, for example in areas such as Medicine and Biology. In this case, the electrical measurements are critical during the various optimization steps for the pH sensor. Therefore, this work presents details of a scientific instrumentation designed to perform various electrical characterization measurements commonly used in the manufacture and scientific research of pH sensors based on EGFET platform. Finally, we point out that both the hardware and the software presented in this work will be made available according to the paradigm of open source hardware.

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“…For some of the regular SCs, ZnO NW arrays, ZnO NT arrays, or SiON/ZnO NT arrays were synthesized on top of the Si 3 N 4 AR layer. To synthesize ZnO NW arrays on the surface of regular SCs, a 10 nm thick ZnO seed layer was sputter-deposited onto the Si 3 N 4 surface, and ZnO NW arrays were synthesized on the surface of this via the hydrothermal growth (HTG) method [17,18]. A mixed solution of 0.07 M ZnO (NO 3 ) 2 ⋅6H 2 O and 0.07 M C 6 H 12 N 4 at 80 ∘ C was employed for 120 min in the HTG process.…”

Section: Introductionmentioning

confidence: 99%

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Wang

et al. 2015

International Journal of Photoenergy

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The fabrication of silicon oxynitride (SiON)/ZnO nanotube (NT) arrays and their application in improving the energy conversion efficiency ( ) of crystalline Si-based solar cells (SCs) are reported. The SiON/ZnO NT arrays have a graded-refractive-index that varies from 3.5 (Si) to 1.9 ∼ 2.0 (Si 3 N 4 and ZnO) to 1.72 ∼ 1.75 (SiON) to 1 (air). Experimental results show that the use of 0.4 m long ZnO NT arrays coated with a 150 nm thick SiON film increases Δ / by 39.2% under AM 1.5 G (100 mW/cm 2 ) illumination as compared to that of regular SCs with a Si 3 N 4 /micropyramid surface. This enhancement can be attributed to SiON/ZnO NT arrays effectively releasing surface reflection and minimizing Fresnel loss.

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pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures

Cited by 34 publications

References 16 publications

pH‐Sensing Characteristics of Hydrothermal Al‐Doped ZnO Nanostructures

pH‐Sensing Characteristics of Hydrothermal Al‐Doped ZnO Nanostructures

Development of a technological tool for the electrical characterization of pH sensors based on EGFET platform

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

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