ExperimentalMaterials: The PLED configuration used in this work was ITO/ PEDOT:MPS(50 nm)/polyfluorene:plystyrene(PS)(80 nm)/Ca(30 nm)/ Ag(250 nm). The ITO glass substrate was a product of Samsung Corning Co. and had a sheet resistance of 10 X/square. MPS used as a PE-DOT modifier was purchased from Dow Corning Co. PEDOT/polystyrenesulfonate (Bayer Co. Ltd.) was used as a HTL, and polyfluorene-based green copolymer (Green K2, Dow Chemical Co.):PS (1:1) blend was used as an LEP. A Ca and Ag double layer was used as a cathode for the devices.Device Fabrication: ITO glass substrates were cleaned with acetone and isopropyl alcohol in an ultrasonic bath for 15 min, respectively, and were dried at 120 C for 2 h before use. The ITO glass substrates were exposed to ultraviolet(UV)/ozone for 15 min and were spin coated with an aqueous PEDOT:MPS solution. The PEDOT:MPS solution was prepared by dissolving MPS in PEDOT solution at concentrations of 0, 0.1, 0.2, and 0.5 wt.-%. The mixed solution was stirred for 60 min to hydrolyze MPS. The hydrolyzed PEDOT:MPS solution was spin-coated on a UV/ozone-treated ITO substrate at a spin speed of 2000 rpm (rpm = revolutions per minute) to get a 500 nm thick HTL layer. After that, the PEDOT:MPS coated substrate was baked at 200 C for 10 min to remove residual solvent. The I±V±L characteristics and lifetime of PEDOT:MPS devices were measured with spin-coated devices. Spin coating of the LEP dissolved in toluene was carried out at a spin speed of 3000 rpm and 80 nm LEP thin film was obtained. The substrates were baked at 90 C for 60 min before cathode deposition. For LITI devices, LEP was spin coated on a poly(ethyleneterephthalate) donor film with a light to heat conversion layer at a thickness of 80 nm. The transfer of the LEP to the HTL layer was performed with a Nd:YAG laser with a total power of 8 W. The LEP-coated donor film was placed on the HTL-coated substrates and was closely adhered to the substrates using vacuum chuck to remove the gap between the donor film and the substrates. The donor film was then exposed to the Nd:YAG laser beam and the exposed LEP was transferred to the substrates. After LITI transfer, the donor film was peeled off and the substrate was baked at 90 C for 60 min. After baking, Ca was deposited at a rate of 0.5 s ±1 followed by Ag evaporation at a rate of 5 s ±1 in a high vacuum chamber (» 10 ±7 torr) as a cathode for devices. The thickness of Ca and Ag was 30 nm and 230 nm, respectively. After cathode deposition, the devices were encapsulated with a metal can and barium oxide.Measurements: I±V±L characteristics of the devices were measured with a PR 650 spectrophotometer and lifetime results were obtained at a constant current mode at a brightness of 500 cd m ±2 . The indium diffusion in PEDOT:MPS devices was analyzed with XPS. The XPS measurements of the coated samples were carried out in ultra-high vacuum chamber ESCALAB 250(VG scientific) with a monochromated Al Ka source was used for analysis; etching of the samples was performed with Ar ion sputter...