Phase-amplitude coupling of semiconductor quantum dot lasers

Melnik, S.; Huyet, Guillaume; Uskov, Alexander V.

doi:10.1109/eqec.2005.1567212

Cited by 2 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The equivalent LEF parameters ( and ) always increase with increasing bias and in the case of LD1 the equivalent LEF reaches values even higher than one. A similar behavior has been experimentally observed in [2] through the small signal measurement of LEF from intensity over frequency modulation response and theoretically confirmed in [6] and [7]. From Fig.…”

Section: B Dependence Of the Chirp On The Working Conditionssupporting

confidence: 87%

“…We have seen that the value of of LD2 is significantly dependent on the working conditions and can be reduced with a proper choice of the bias point (see Section III-B). In this example the plasma contribution is negligible as for LD1, but it may be more significant if the bias increases or the energy separation between ES and WL reduces because in these conditions the WL would accumulate a significant carrier density [6]. Fig.…”

Section: A Chirp Analysismentioning

confidence: 92%

See 1 more Smart Citation

Numerical Analysis of the Frequency Chirp in Quantum-Dot Semiconductor Lasers

Gioannini

Montrosset

2007

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

We present a numerical model for the analysis of the chirp dynamics of quantum-dot (QD) semiconductor laser under large signal current modulation. The model is based on the multipopulation rate equation formalism, and it includes all the peculiar characteristics of the active QD material such as the inhomogeneous broadening of the gain spectrum, the presence of an excited state confined in the QDs and the presence of nonconfined states due to the wetting layer and the barrier. In this paper the model is applied to the analysis of the chirp of two QD single-mode lasers emitting from the ground state and from the excited state, respectively. In order to make comparisons of the chirp in various operating conditions, we define some equivalent parameters for quantifying the adiabatic and transient contributions to the chirp. These parameters are then used to analyze the chirp as function of the bias current, of the modulation depth and of the modulation frequency. All the various simulation results show that the carrier accumulation in the QD states, poorly involved in the stimulated emission process and the carrier dynamics in these states, can cause a nonzero chirp under current modulation even for the ideal condition of zero linewidth enhancement factor (or -parameter) at the laser threshold.

show abstract

Section: B Dependence Of the Chirp On The Working Conditionssupporting

confidence: 87%

Section: A Chirp Analysismentioning

confidence: 92%

Numerical Analysis of the Frequency Chirp in Quantum-Dot Semiconductor Lasers

Gioannini

Montrosset

2007

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

show abstract

“…Since the dg/dN and LEF are differential parameters, their values depend on the carrier distribution at the bias point, where they are measured and therefore, the results above threshold can significantly differ from those at threshold. Similar results and conclusions have been achieved almost simultaneously by Melnik et al (2005) using a simple rate equation model that considers only a carrier population in the QD confined state and in the WL. For our analysis we have developed a multi-population rate equation (MP-RE) model for the dynamic analysis of a QD-SL and we have simulated the experiments usually performed in the laboratory to get the dg/dN and the LEF.…”

Section: Introductionsupporting

confidence: 81%

“…We have also observed that the differences between the LEF static and dynamic values is strongly dependent on the operating wavelength and the bias current. The experimental results reported in Martinez et al (2005) and the calculations in Melnik et al (2005) have evidenced the same kind of discrepancy. …”

Section: Extraction Of the Equivalent Lefsupporting

confidence: 61%

Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers

2006

View full text Add to dashboard Cite

Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers m a r i a n g e l a g i o a n n i n i * , a l b e r t o s e v e g a a n d i v o m o n t r o s s e t Abstract. We present a multi-population rate equation model for the analysis of the static and dynamic characteristics of a quantum dot (QD) semiconductor laser. The model is applied to the extraction of the differential gain and linewidth enhancement factor of the QD laser simulating the same kind of experiments usually done in the laboratory. Coherently with the experimental results, we show the difference between the values of the differential parameters extracted in below and above threshold characterizations. We demonstrate that such discrepancy is due the complex dynamics of the carriers in those energy states, whose carrier concentration is not clamped by the stimulated emission process above threshold.

show abstract

Phase-amplitude coupling of semiconductor quantum dot lasers

Cited by 2 publications

References 0 publications

Numerical Analysis of the Frequency Chirp in Quantum-Dot Semiconductor Lasers

Numerical Analysis of the Frequency Chirp in Quantum-Dot Semiconductor Lasers

Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers

Contact Info

Product

Resources

About