Theoretical and experimental approach on dielectric properties of ZnO nanoparticles and polyurethane/ZnO nanocomposites J.Erratum: "Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by rf magnetron sputtering" [J.Red thin-film phosphors were fabricated based on a ZnO:͑La,Eu͒OF nanocomposite structure where ͑La,Eu͒OF nanoparticles were dispersed in a ZnO film matrix. The films were deposited on glass substrates by a sol-gel method at a low temperature of 600°C using trifluoroacetic acid as a fluorine source. Doping gallium into the films suppressed the grain growth of ZnO, increased the optical band gap, and decreased electrical resistivity, which indicates that Ga 3ϩ was selectively incorporated into the ZnO lattice. Eu 3ϩ was practically doped in the LaOF lattice. As a result, strong red emissions due to the 5 D 0 → 7 F 2 transition of Eu 3ϩ were observed in both photo-͑PL͒ and cathodoluminescence ͑CL͒ measurements. The efficiency of ultraviolet light excitation at 274 nm was promoted by the charge transfer from O 2Ϫ to Eu 3ϩ in PL. Ga doping was found to increase the CL intensity of the film, which was attributed to suppression of charge accumulation on the films.