Phase-change memories: materials science, technological applications and perspectives

Longo, M.; Fantini, Paolo; Noé, Pierre

doi:10.1088/1361-6463/aba0e0

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…Phase‐change memories (PCMs) have emerged as one of the most promising candidates as a storage class memory (SCM) aiming at bridging the technological gap between dynamic random access memory (DRAM) and NAND‐Flash memories. [ 1 ] In a PCM, a small volume of a chalcogenide phase‐change material switches quickly and reversibly between an amorphous state (RESET state of the memory) and a polycrystalline state (SET state of the memory). [ 2–4 ] The resistance contrast between the SET and RESET states reaches several orders of magnitude.…”

Section: Figurementioning

confidence: 99%

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb₂Te₃ Superlattices

Térébénec

Castellani

Bernier

et al. 2021

Physica Rapid Research Ltrs

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GeTe/Sb2Te3 superlattices (SLs) obtained by sputtering are integrated in phase‐change memory (PCM) devices with a “wall structure”. The high structural quality of SLs deposited on TiN or SiNx layers, used as metallic bottom heater and dielectric bottom layer in PCM devices, is established by X‐ray diffraction, for as‐grown SLs and after an annealing corresponding to the maximum thermal budget during the integration process. Scanning transmission electron microscopy (STEM) images of SLs within PCM cells confirm that the SL structure is kept after integration. A robust statistical analysis on a large number of devices demonstrates unambiguously that the RESET current is lower in SL devices than in GeTe reference devices and decreases when the Sb2Te3 layer thickness in the SL increases from 2 to 8 nm. STEM imaging of a PCM cell incorporating an SL demonstrates that switching from the low‐ to the high‐resistance state occurs through a melting–quenching process and is not due to crystal–crystal transition or defect reorganization in the SL, in contrast to what is commonly stated in the literature on interfacial phase‐change memories (iPCMs). The origin of the improved switching performance of SL‐based PCM devices is discussed, linked with the impact of swapped bilayers.

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Section: Figurementioning

confidence: 99%

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb₂Te₃ Superlattices

Térébénec

Castellani

Bernier

et al. 2021

Physica Rapid Research Ltrs

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“…5,6 Recently, a variety of electronic synaptic devices have been developed to achieve this goal, such as memristors, phase change memory, atomic switches and synaptic transistors. [7][8][9][10][11][12][13][14][15][16][17][18] Among them, although two-terminal synaptic devices have the advantages of a simple structure, high integration and compatibility with present complementary metal-oxide semiconductor (CMOS) technology, the learning and memory process in two-terminal synaptic devices are separated. Whereas, threeterminal thin film synaptic transistors have shown great potential in artificial synapses because of their low energy consumption, high scalability, similarity to biological neurons and precise regulation of channel conductance.…”

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confidence: 99%

Synaptic transistor with tunable synaptic behavior based on a thermo-denatured polar polymer material

et al. 2022

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The integration of chalcogenide phase-change materials (PCMs) in nonvolatile resistive memories is currently attracting a great deal of interest. [1][2][3] PCMs, such as alloys belonging to the GeTe-Sb 2 Te 3 pseudo-binary line in the ternary Ge-Sb-Te phase diagram, exhibit fast and reversible phase transformations between their amorphous (a-) and crystalline (c-) states. The large electrical and optical contrast between a-and c-phases have been ascribed to the existence of a particular bonding mechanism in the crystalline state.

…”

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confidence: 99%

Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe_1−xTe_x Thin Films

Tomelleri

Hippert

Farjot

et al. 2020

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The electrical, optical, and structural properties of GeSe1−xTex phase‐change materials thin films with 0.16 ≤ x ≤1 prepared by cosputtering of GeSe and GeTe targets are studied. The crystallization temperature of the films increases significantly when the Te content decreases. Se‐rich films show an extremely large electrical contrast between their amorphous and crystalline states. A high polarizability of the crystalline phase is observed in the entire x range and is related to the presence of metavalent bonds. This is explained by the persistence of a rhombohedral crystalline phase, isostructural to GeTe, in the GeSe1−xTex films down to x = 0.16. Hence, the substitution of only 16 at% of the Se atoms by Te atoms transforms the covalent GeSe into a phase‐change material with a huge and unprecedented contrast of resistivity (up to 11 orders of magnitude) and a very high thermal stability (up to 10 years at 272 °C) for an alloy exhibiting no phase separation upon crystallization. This outstanding combination of properties makes Se‐rich GeSe1−xTex thin films extremely promising for integration in memory devices requiring a very high data retention such as automotive and embedded applications.

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Phase-change memories: materials science, technological applications and perspectives

Cited by 6 publications

References 15 publications

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb₂Te₃ Superlattices

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb₂Te₃ Superlattices

Synaptic transistor with tunable synaptic behavior based on a thermo-denatured polar polymer material

Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe_1−xTe_x Thin Films

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Phase-change memories: materials science, technological applications and perspectives

Cited by 6 publications

References 15 publications

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

Synaptic transistor with tunable synaptic behavior based on a thermo-denatured polar polymer material

Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe1−xTex Thin Films

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Product

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Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb₂Te₃ Superlattices

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb₂Te₃ Superlattices

Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe_1−xTe_x Thin Films