Phase-Change Memory Devices Operative at 100 $^{\circ} \hbox{C}$

Kao, Kin-Fu; Chu, Yung-Ching; Chen, F T; Tsai, Ming-Jinn; Chin, Tsung‐Shune

doi:10.1109/led.2010.2050190

Cited by 8 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4] Generally, luminous efficacy of optoelectronic devices depends on both internal quantum efficiency and light extraction efficiency. 5,6 Nowadays, internal quantum efficiency of the best commercial LED has been up to 90%. However, light extraction efficiency is still limited, mainly due to the total reflection in the interface between LED and the air.…”

mentioning

confidence: 99%

Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes

Zhou

Wang

Lin

et al. 2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

We propose patterned sapphire substrates (PSSs) with wide-bottomed cone-shaped patterns to enhance the light extraction efficiency of GaN-based light-emitting diodes (LEDs). Simulation reveals that PSS with wide-bottomed cone-shaped patterns is of higher yield in LED light extraction efficiency. The subsequent fabrication of and epitaxial growth of LED structure on the proposed wide-bottomed PSS verify the simulation results experimentally. It is demonstrated that wide-bottomed patterns with narrow distance between patterns can effectively release stress, avoid the decline in crystal quality and improve light extraction efficiency. By comparison with the popular commercially available PSS, LED grown on the proposed PSS whose wide-bottomed patterns are of 3.91 μm in width, 2.37 μm in height and 0.09 μm in distance is proven to be of as high as 16.7% improvement in luminous efficacy and 33.8% drop in dislocation density, which shows the promising future for its application in the highly efficient LEDs.

show abstract

mentioning

confidence: 99%

Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes

Zhou

Wang

Lin

et al. 2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The ten-year-failure temperature is more than 20 C higher than the crystallization temperature of Ge 2 Sb 2 Te 5 . Among the highest reported T 10y values are 150 C for indium doped GeTe films, 10 and of our other Sb-rich Ga 25 Te 8 Sb 67 system, being 210 C. 12 Modification of Ge 2 Sb 2 Te 5 (GST) by the addition of extra substitutional or interstitial elements was reported to enhance the crystallization temperature (T x ) and activation energy of crystallization. 13,14 Such modifications lead to enhanced T 10y at the expense of cycling stability and crystallization speed.…”

Section: Resultsmentioning

confidence: 69%

“…The Ga 25 Te 8 Sb 67 alloy has the best thermal stability of studied compositions as it has the highest crystallization temperature 276 C and the highest temperature ever reported for 10-year-failure, 210 C. In fact, the memory cells made of this particular composition can be operative at 100 C for more than 3 Â 10 5 cycles. 12 In general, the composition window is quite ample considering thermal stability. We suggest that composition ranges Ga 18 $ 25 at.…”

Section: Resultsmentioning

confidence: 99%

Materials for phase-change memory with elevated temperature stability

Kao

Chu

Tsai

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Thermal stability is one of the key issues in phase-change memory. We try to tackle it by developing new compositions based on Ga-Te-Sb system. Thermal stability is exemplified using Ga 18 Te 12 Sb 70 which shows crystallization-temperature (T x ) 248 C and activation energy of non-isothermal crystallization 5.9 eV. Films were isothermally soaked at 5 $ 30 C below T x to estimate the failure-time when electrical resistance dropped to a half of the original. Arrhenius plot attained using logarithm failure-time versus reciprocal temperature were extrapolated to the temperature corresponding to 10-year failure (T 10y ) as 183 C. Pre-crystallization structure upon heating to 2 $ 5 C below T x reflects stable amorphous phase of the alloy up to at least 240 C. Memory-cells made of Ga 18 Te 12 Sb 70 can be set-reset at 20 $ 500 ns with electrical currents around 66% those of our Ge 2 Sb 2 Te 5 cells. We suggest that compositions Ga 18-25 Te 8-12 Sb 67-70 are optimal to ensure T x > 240 C, T 10y > 180 C and with low operation-currents. V C 2012 American Institute of Physics.

show abstract

“…However, this places greater requirements on the PCM. In automotive applications, high-speed and elevated-temperature operation is needed to process large amounts of data efficiently and ensure normal storage at high working temperatures [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Xue

Yan

et al. 2021

Nano-Micro Lett.

View full text Add to dashboard Cite

Phase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the efficient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb2Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of > 106 cycles, and reversible switching at 140 °C. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta–Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.

show abstract

Phase-Change Memory Devices Operative at 100 $^{\circ} \hbox{C}$

Cited by 8 publications

References 9 publications

Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes

Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes

Materials for phase-change memory with elevated temperature stability

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

Contact Info

Product

Resources

About