Phase Change Pipe for Nonvolatile Routing

Kan'an, Nadim H.; Silva, Helena; Gokirmak, Ali

doi:10.1109/jeds.2016.2515026

Cited by 5 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The multicontact phase‐change devices described in this article can be used to implement flip‐flops, [ 52 ] routers, [ 53,54 ] multiplexers, [ 55 ] counters, and state machines at a smaller CMOS footprint as discussed later. These nonconventional phase‐change devices can be integrated with CMOS access devices to offer more functionality and/or reduced area compared with conventional nonvolatile memory devices and CMOS circuitry, and can also enable computations using intermittent power.…”

Section: Figurementioning

confidence: 99%

“…[9] Complementing CMOS circuitry with functional phase-change elements in the memory layer to achieve memory control, multiplexing, routing, and neuromorphic computations will relieve the area concerns in the underlying CMOS layer, making it easier to realize computer-on-chip and computation-inmemory as well as hardware implementation of artificial neural networks (Figure 2). The multicontact phase-change devices described in this article can be used to implement flip-flops, [52] routers, [53,54] multiplexers, [55] counters, and state machines at a smaller CMOS footprint as discussed later. These nonconventional phase-change devices can be integrated with CMOS access devices to offer more functionality and/or reduced area compared with conventional nonvolatile memory devices and CMOS circuitry, and can also enable computations using intermittent power.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Phase‐Change Logic via Thermal Cross‐Talk for Computation in Memory

Kan'an

Khan

Woods

et al. 2020

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

Herein, logic function implementations are computationally demonstrated using lateral and vertical multicontact phase‐change devices integrated with complementary metal–oxide–semiconductor (CMOS) circuitry, which use thermal cross‐talk as a coupling mechanism to implement logic functions at smaller CMOS footprints. Thermal cross‐talk during the write operations is utilized to recrystallize the previously amorphized regions to achieve toggle operations. Amorphized regions formed between different pairs of write contacts are utilized to isolate read contacts. Typical expected reduction in CMOS footprint is ≈50% using the described approach for toggle‐multiplexing, JK‐multiplexing, and 2 × 2 routing. The switching speeds of the phase‐change devices are in the order of nanoseconds and are inherently nonvolatile. An electrothermal modeling framework with dynamic materials models is used to capture the device dynamics, and current and voltage requirements.

show abstract

Section: Figurementioning

confidence: 99%

mentioning

confidence: 99%

Phase‐Change Logic via Thermal Cross‐Talk for Computation in Memory

Kan'an

Khan

Woods

et al. 2020

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

show abstract

“…In the presented case, different electrical and optical properties of the amorphous and crystalline phases of GST provides the key advantage for tunability 20 21 . The resistance contrast for two opposite states of the GST ( R a / R c ) is around ~10 7 39 40 41 . By keeping the overall length of the interconnecting nanobridge fixed at L B = 200 nm, and by varying only the length of the GST junction, we shifted the resonant mode to the shorter spectra for both a-GST and c-GST as shown in Fig.…”

Section: Analyzing the Proposed Metallodielectric Bridged Dimermentioning

confidence: 99%

Optical Switching Using Transition from Dipolar to Charge Transfer Plasmon Modes in Ge2Sb2Te5 Bridged Metallodielectric Dimers

Ahmadivand

Gerislioglu

Raju

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Capacitive coupling and direct shuttling of charges in nanoscale plasmonic components across a dielectric spacer and through a conductive junction lead to excitation of significantly different dipolar and charge transfer plasmon (CTP) resonances, respectively. Here, we demonstrate the excitation of dipolar and CTP resonant modes in metallic nanodimers bridged by phase-change material (PCM) sections, material and electrical characteristics of which can be controlled by external stimuli. Ultrafast switching (in the range of a few nanoseconds) between amorphous and crystalline phases of the PCM section (here Ge2Sb2Te5 (GST)) allows for designing a tunable plasmonic switch for optical communication applications with significant modulation depth (up to 88%). Judiciously selecting the geometrical parameters and taking advantage of the electrical properties of the amorphous phase of the GST section we adjusted the extinction peak of the dipolar mode at the telecommunication band (λ~1.55 μm), which is considered as the OFF state. Changing the GST phase to crystalline via optical heating allows for direct transfer of charges through the junction between nanodisks and formation of a distinct CTP peak at longer wavelengths (λ~1.85 μm) far from the telecommunication wavelength, which constitutes the ON state.

show abstract

“…The CMOS realestate needed for memory access scales with the memory capacity. Hence, approaches that reduce the CMOS footprint for routing 10 and logic [11][12][13][14][15][16] functions are highly desired. Multi-contact phase change devices integrated with CMOS can significantly reduce the area requirements and provide the additional benefit of nonvolatility.…”

Section: Introductionmentioning

confidence: 99%