“…Indeed, the fundamental building block [MQ 4 ] tetrahedron (M = metal cations; Q = S, Se, Te) in the DL structure is always arranged in an aligned manner, which will lead to the superposition of the microscopic second-order susceptibility, resulting in a larger SHG response . For decades, plentiful chalcogenides with a DL structure have been reported, mainly including the I–III–Q 2 (I = Li, Ag; III = Al, Ga, In; Q = S, Se, Te) family, ,, I 2 –IV–Q 3 (I = Ag, Cu; IV = Si, Ge, Sn; Q = S, Se) family, − I 3 –V–Q 4 (I = Li, Ag, Cu; V = P, As, Sb; Q = S, Se) family, I 2 –II–IV–Q 4 (I = Li, Ag, Cu; II = Zn, Cd, Hg; IV = Si, Ge, Sn; Q = S, Se) family, − and I 4 –II–IV 2 –Q 7 (I = Li, Ag; II = Zn, Cd, Hg, Mn; IV = Si, Ge, Sn; Q = S, Se) family. , However, most of the compounds mentioned above are sulfides and selenides, and tellurides with DL structures are rarely reported. Compared with sulfides and selenides, tellurides generally possess a larger electronic polarization and a wider transmittance range, making them potentially more suitable candidates as MFIR NLO materials …”