Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy

High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the {111} facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si{111} growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (IYL/INBE) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E2(high) optical phonon mode at 565.224 ± 0.001 cm−1 with a narrow full width at half maximum of 1.526 ± 0.002 cm−1 was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si{111} surface etched on Si(100).

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Pyramidal shape four V-grooved silicon substrate for enhancing cubic phase gallium nitride growth

Khan

et al. 2022

Applied Physics Letters

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Strong spontaneous polarization and piezoelectric effects in hexagonal gallium nitride (h-GaN) seriously limit the efficiency of h-GaN-based devices. To overcome this issue, a pyramidal-shaped four V-grooved silicon (4PVG-Si) patterned substrate is introduced for transforming h-GaN into cubic GaN (c-GaN) at the nanoscale. The purpose of using 4PVG-Si instead of simple V-grooved Si (VG-Si) is to improve the crystal quality with the maximum cubic volume of GaN. The growth of c-GaN was verified by high-resolution x-ray diffraction and cathodoluminescence, whereas high-resolution transmission electron microscopy (HRTEM) was further used to analyze the excessive and smooth c-GaN growth. The HRTEM images revealed that optimizing the growth of an aluminum nitride layer with 10–15 nm thicknesses promotes the maximum c-GaN volume. However, exceeding this thickness tended to the reduction in c-GaN volume, resulting in the development of big voids with abnormal tip-shaped growth. In the presence of big voids and abnormal tip-shaped growth, the hexagonal growth closed very late, and the cubic volume of c-GaN is reduced. To further promote the cubic phase of GaN, the growth conditions of GaN were also optimized. Our results proved that the design of 4PVG-Si and optimized growth conditions promote the maximum cubic volume of GaN.

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Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy

Cited by 5 publications

References 27 publications

GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

Pyramidal shape four V-grooved silicon substrate for enhancing cubic phase gallium nitride growth

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