2013
DOI: 10.1002/ejic.201301008
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Phase‐Controlled Deposition of Copper Sulfide Thin Films by Using Single‐Molecular Precursors

Abstract: Herein, we describe the synthesis and characterization of new ligands, N, and N,N-dipropyl-NЈ-(1-naphthoyl)thiourea (1b), and their complexes with copper, bis[N,N-diethyl-NЈ-(1-naphthoyl)thioureato]Cu II (2a) and bis[N,N-dipropyl-NЈ-(1-naphthoyl)thioureato]Cu II (2b). All four compounds (i.e., 1a, 1b, 2a, and 2b) were characterized by elemental analysis, 1 H NMR and 13 C NMR spectroscopy, and FTIR spectroscopy. The structures of compounds 1a, 1b, and 2b were determined by single-crystal X-ray diffraction anal… Show more

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Cited by 18 publications
(5 citation statements)
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“…only Cu is present), flake-like sheets were observed (Fig. 6 f), which is consistent with a previous report of AACVD decomposition of a bis[N,N-dipropyl-N-(1-naphthoyl)thioureato]copper(II) precursor 67 .
Figure 6 Representative SEM images of Cu 2x Sb 2(1−x) S y thin film synthesised by the hot-wall AACVD at 450 °C using various values of x, where x = ( a ) 0, ( b ) 0.2, ( c ) 0.4, ( d ) 0.6, ( e ) 0.8 and ( f ) 1.
…”
Section: Resultssupporting
confidence: 92%
“…only Cu is present), flake-like sheets were observed (Fig. 6 f), which is consistent with a previous report of AACVD decomposition of a bis[N,N-dipropyl-N-(1-naphthoyl)thioureato]copper(II) precursor 67 .
Figure 6 Representative SEM images of Cu 2x Sb 2(1−x) S y thin film synthesised by the hot-wall AACVD at 450 °C using various values of x, where x = ( a ) 0, ( b ) 0.2, ( c ) 0.4, ( d ) 0.6, ( e ) 0.8 and ( f ) 1.
…”
Section: Resultssupporting
confidence: 92%
“…115.88 (13) N2-C12-N1 114.11 (14) 114.01 (12) 117.8 (4) 116.9 (4) 116.72 (14) N2-C12-S1 128.65 (13) 127.60 (10) 123.9 (4) 125.2 (4) 124.47 (12) N1-C12-S1 117.20 (12) 118.38 (10) 118.3 (3) 117.9 (3) 118.81 (11) C14-C13-N2 125.48 (14) 123.97 (13) 114.9 (4) 112.4 (4) 118.36 (14) Torsion angles (°) Fig. 3b.…”
Section: (4)mentioning
confidence: 98%
“…NT Aydin et al [42] Aydin et al [43] Arslan et al [44] Bond lengths (Å ) S1-C12 1.6610 (16) 1.6521 (14) 1.672 (4) 1.658 (4) 1.6696 (17) O1-C11 1.226 (2) 1.2241 (18) 1.224 (5) 1.228 (5) 1.224 (2) N1-C11 1.379 (2) 1.3748 (18) 1.374 (5) 1.363 (5) 1.377 (2) N1-C12 1.407 (2) 1.3931 (17) 1.384 (5) 1.394 (5) 1.3974 (19) N2-C12 1.340 (2) 1.3450 (17) 1.317 (5) 1.324 (5) 1.327 (2) N2-C13 1.414 (2) 1.4114 (17) 1.454 (5) 1.449 (5) 1.4408 (19) C10-C11 1.494 (2) 1.4826 (19) 1.483 (6) 1.482 (6) 1.488 (2) Bond angles (°) C11-N1-C12 129.13 (14) 129.20 (12) 129.6 (4) 130.3 (4) 128.11 (13) C12-N2-C13 131.14 (14) 129.66 (12) 124.2 (4) 123.5 (4) 123.59 (13) C9-C10-C11 119.36 (14) 122.71 (12) 125.6 (4) 117.7 (4) 121.68 (14) C1-C10-C11 119.79 (14) 117.77 (13) 117.7 …”
Section: Parametersunclassified
See 1 more Smart Citation
“…[2] Generally dual source route (DSR) is used for the fabrication of thin films but this approach has the disadvantages of impure films, uncontrolled stoichiometry, and low yields due to multiple steps and involvement of hazardous chemicals. To overcome these disadvantages single source molecular precursors (SMP) have recently gained importance for the fabrication of oxides, sulfides, [3] selenides, [4] and tellurides. [5] SMP approach is advantageous because of good control on stoichiometry, flow, temperature, leak control, and simple installation with safer experimentation.…”
Section: Introductionmentioning
confidence: 99%