Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor

Kim, Hyo Yeon; Nam, Ji Hyeun; George, Sheby Mary; Park, Jin‐Seong; Park, Bo Keun; Kim, Gon−Ho; Jeon, Dong Ju; Chung, Taek; Han, Jeong Hwan

doi:10.1016/j.ceramint.2018.09.263

Cited by 45 publications

(31 citation statements)

References 42 publications

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“…The XPS spectra were calibrated by C 1s (284.5 eV). The peak value of O V was located at 532 ± 0.1 eV and that of O L were located at 531 ± 0.1 eV [ 24 , 25 , 26 ]. The Sn 3d peak for the films prepared at different plasma powers are added as shown in Figure S1 .…”

Section: Methodsmentioning

confidence: 99%

“…The Sn 3d curves are deconvoluted into two components of Sn 4+ and Sn 2+ . The higher binding energy component at ~487.5 eV is attributed to the Sn 4+ , while the lower one at ~486.4 eV is typically assigned to Sn 2+ [ 24 , 25 , 26 ]. The electrical properties including the resistivity, carrier concentration, and mobility were conducted by Hall effect measurements (HMS-5000, Side Semiconductor Technology, Xiamen, China) at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…Comparable to what has been accomplished for ALD, the challenge for PEALD regards the effects of plasma radicals on the deposition mechanism and the quality of deposited SnO 2 thin films. With the development of plasma assistance for the deposition, there are an increasing number of articles about high-quality PEALD SnO 2 films [ 22 , 23 , 24 , 25 , 26 ]. On the other hand, the SnO 2 thin films have been widely used in many applications such as gas sensors [ 16 ], photovoltaics [ 19 , 20 ], and photodetectors [ 20 ].…”

Section: Introductionmentioning

confidence: 99%

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Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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“…Growth of SnO has been performed by various methods such as atomic layer deposition (ALD) 13 , DC magneton sputtering 14 , pulsed layer deposition (PLD) 15 , 16 , chemical spray pyrolysis 17 , exfoliation 18 and thermal decomposition 19 . Accurate control of the oxidation state of Sn is challenging and often SnO 2 and other phases are produced.…”

Section: Introductionmentioning

confidence: 99%

“…In most cases, the growth of SnO will also yield non stoichiometric compound as in the studies of Refs. [13][14][15][16][17][18][19] .…”

mentioning

confidence: 99%

Electronic properties of the Sn1−xPbxO alloy and band alignment of the SnO/PbO system: a DFT study

Kelaidis

Bousiadi

Zervos

et al. 2020

Sci Rep

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Tin monoxide (SnO) has attracted attention due to its p-type character and capability of ambipolar conductivity when properly doped, properties that are beneficial for the realization of complementary oxide thin film transistors technology, transparent flexible circuits and optoelectronic applications in general. However, its small fundamental band gap (0.7 eV) limits its applications as a solar energy material, therefore tuning its electronic properties is necessary for optimal performance. In this work, we use density functional theory (DFT) calculations to examine the electronic properties of the Sn1−xPbxO ternary oxide system. Alloying with Pb by element substitution increases the band gap of SnO without inducing defect states in the band gap retaining the anti-bonding character of the valence band maximum which is beneficial for p-type conductivity. We also examine the properties of the SnO/PbO heterojunction system in terms of band alignment and the effect of the most common intrinsic defects. A broken gap band alignment for the SnO/PbO heterojunction is calculated, which can be attractive for energy conversion in solar cells, photocatalysis and hydrogen generation.

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Planar Cation Passivation on Colloidal Quantum Dots Enables High‐Performance 0.35–1.8 µm Broadband TFT Imager

Liu,

Deng

et al. 2024

Advanced Materials

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Solution‐processed colloidal quantum dots (CQDs) are promising candidates for broadband photodetectors from visible light to shortwave infrared (SWIR). However, large‐size PbS CQDs sensitive to longer SWIR are mainly exposed with nonpolar (100) facets on the surface, which lack robust passivation strategies. Herein, an innovative passivation strategy that employs planar cation, is introduced to enable face‐to‐face coupling on (100) facets and strengthen halide passivation on (111) facets. The defect density of CQDs film (Eg ∼0.74 eV) is reduced from 2.74×1015 to 1.04×1015 cm−3, coupled with 0.1 eV reduction in the activation energy of defects. The resultant CQDs photodiodes exhibit a low dark current density of 14 nA cm−2 with a high external quantum efficiency of 62%, achieving a linear dynamic range of 98 dB, a −3db bandwidth of 103 kHz and a detectivity of 4.7×1011 Jones. The comprehensive performance of our CQDs photodiodes outperforms previously reported CQDs photodiodes operating at >1.6 μm. By monolithically integrated with thin‐film transistor (TFT) readout circuit, the broadband CQDs imager covering 0.35‐1.8 μm realizes the functions including silicon wafer perspectivity and material discrimination, showing its potentials for wide applications.This article is protected by copyright. All rights reserved

show abstract

Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor

Cited by 45 publications

References 42 publications

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Electronic properties of the Sn1−xPbxO alloy and band alignment of the SnO/PbO system: a DFT study

Planar Cation Passivation on Colloidal Quantum Dots Enables High‐Performance 0.35–1.8 µm Broadband TFT Imager

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