Phase defect printability analyses: dependence of defect type and EUV exposure condition

Terasawa, Tsuneo; Yamane, Takeshi; Arisawa, Yukiyasu; Watanabe, Hidehiro

doi:10.1117/12.916387

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…The distribution of the diffraction signals for the current mask blank fluctuates for defects of 30 nm width and 1 nm depth. Terasawa et al 30) reported that this size of defect causes an 8% line-width error for a 22 nm line-and-space pattern with the scanner that has a NA of 0.33. The deposition process should be optimized to decrease the intensity of scattering from the multilayer.…”

Section: Fluctuations Of the Scattering Distribution At 30-nmwide Def...mentioning

confidence: 99%

Characterization of small phase defects using a micro-coherent extreme ultraviolet scatterometry microscope

Tanaka¹,

Harada²,

Amano³

et al. 2014

Jpn. J. Appl. Phys.

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To evaluate defects on extreme ultraviolet (EUV) masks in the blank state of manufacture, we developed a micro-coherent EUV scatterometry microscopy (micro-CSM) system. Its illumination source is coherent EUV light with a 230 nm focus diameter on the defect using a Fresnel zoneplate. This system directly observes the reflection and scattering intensities, which are strongly related to the printability of a defect. After observing pit-type program phase defects with a 60 nm width and 1 nm depth, we estimated the reflection and scattering intensities of each defect using step-and-repeat measurement around the defect. The reflection and scattering intensities from the program defects of the same design fluctuated. This indicates that the actual volumes of all defects differ even for the same design. Additionally, the scattering distributions of 30-nm-wide defects were anisotropic owing to interference with speckle from multilayer scattering. Thus, micro-CSM demonstrates that the scattering distribution depends on the defect position in the multilayer.

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Section: Fluctuations Of the Scattering Distribution At 30-nmwide Def...mentioning

confidence: 99%

Characterization of small phase defects using a micro-coherent extreme ultraviolet scatterometry microscope

Tanaka¹,

Harada²,

Amano³

et al. 2014

Jpn. J. Appl. Phys.

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“…To evaluate inspection tool sensitivity, PDM is improtant 7 . Influence of phase defect to wafer print has studied 8 . Requested pattern size for seed defect is severe.…”

Section: Introductionmentioning

confidence: 99%

Challenge for under 40nm size pattern making for EUV mask

et al. 2013

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Extreme Ultraviolet Lithography (EUVL) is a promising technology for the next generation lithography. It will be applied for half pitch 16nm node and beyond. The pattern resolution of recent EUV lithography is around hp20nm and next target is hp16nm. Although present requirement for EUV mask pattern resolution is hp64 nm, there is a special request to make under 40nm size pattern for EUV mask. One of examples is programmed phase defect mask (PDM).Phase defect of EUV blank affects large influence to wafer print result. Blank inspection is one of the key technology for EUV mask fabrication. To evaluate blank inspection tool, program defect mask is essential. Other examples are EUV mask for EUV diffraction exposure tool and EUV microscope evaluation. These masks need absorber pattern resolution of 30nm and smaller. In this paper, we will present process development results targeting 30nm size pattern.Programmed defect size achieved to 20nm width (FWHM: width at half maximum), 1.0nm height, both pit and bump defect. Absorber pattern resolution achieved 30nm half pitch. Not only simple dense line pattern, we fabricated radial pattern and any angle pattern.

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“…Therefore, image simulation study has been extensively conducted in order to clarify such phase defect impacts. [19][20][21] Exposure test using EUVL mask with programmed phase defects is an effective way to understand the influence of phase defects on printed patterns, [22][23][24] and to define the specifications of phase defect inspection tool. However, because of the limited capability of current exposure tools for printing 16 nm and sub-16 nm it is difficult to evaluate the impact of phase defect on printed patterns on wafer at these small feature sizes.…”

Section: Introductionmentioning

confidence: 99%

Simulation Analysis of the Characteristics of a High Magnification Imaging Optics for the Observation of Extreme Ultraviolet Lithography Mask to Predict Phase Defect Printability

Terasawa¹,

Arisawa²,

Amano³

et al. 2013

Jpn. J. Appl. Phys.

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By employing simulation, we analyzed the characteristic of the optics of high-magnification multilayer-coated mirror employed for the examination of extreme ultraviolet lithography (EUVL) mask, and we also examined the performance of phase defect printability prediction. The imaging optics comprises Schwarzschild optics and a concave mirror; and it is modeled as an imaging means with an annular-shaped pupil. In this simulation, tilted coherent illumination that was successfully applied in an EUV microscope constructed at a beamline of the NewSUBARU, was assumed. Observation images of mask patterns affected by phase defects were simulated assuming EUVL masks representing half pitches of 16 and 11 nm generations; and those simulated results were compared with the simulated reduction-projection images on wafer formed by an exposure tool. Although the high-magnification observation optics does not completely emulate the printed pattern images on wafer it predicts the existence of phase defects and predict the value of their impacts.

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Phase defect printability analyses: dependence of defect type and EUV exposure condition

Cited by 6 publications

References 7 publications

Characterization of small phase defects using a micro-coherent extreme ultraviolet scatterometry microscope

Characterization of small phase defects using a micro-coherent extreme ultraviolet scatterometry microscope

Challenge for under 40nm size pattern making for EUV mask

Simulation Analysis of the Characteristics of a High Magnification Imaging Optics for the Observation of Extreme Ultraviolet Lithography Mask to Predict Phase Defect Printability

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