“…Thus, for very thin barriers, equation (1) is equivalent to the assumption that an integral of the potential barrier height taken along an electron path inside the classically forbidden region is a uniform random variable (note that in a strongly disordered insulating layer such a path can significantly exceed the nominal barrier thickness d due to elastic subbarrier defect scatterings). Even more, we can conclude that the Schep-Bauer formula (1) for the transparency D is not limited to this assumption but is valid, independently of the physical nature, when (i) the transparency may be represented as a one-parameter Lorentzian and (ii) this parameter is uniformly distributed from very small up to very large values (see the related discussion concerning spatial distribution of barrier defects in the paper by Il'ichev et al [36]). It is interesting that before the work [6], the same relation (1) was derived for a quasi-ballistic double-barrier INI interspace with two identical uniform insulating layers [37], a system that is physically very different from a thin disordered dielectric film.…”